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Published in: Journal of Materials Science: Materials in Electronics 3/2015

01-03-2015

Effect of defects on the basal-plane resistivity of \(\hbox {YBa}_2\hbox {Cu}_3\hbox {O}_{7-\delta }\) and \(\hbox {Y}_{1-y}\hbox {Pr}_y\hbox {Ba}_2\hbox {Cu}_3\hbox {O}_{7-x}\) single crystals

Authors: Ruslan V. Vovk, Georgij Ya. Khadzhai, Oleksandr V. Dobrovolskiy, Nikolaj R. Vovk, Zarif F. Nazyrov

Published in: Journal of Materials Science: Materials in Electronics | Issue 3/2015

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Abstract

Temperature dependences of the basal-plane resistivity of \(\hbox {YBa}_2\hbox {Cu}_3\hbox {O}_{7-\delta }\) single crystals with different oxygen deficiency levels \(\delta\) are investigated in the temperature interval \(T_c\)–300 K. In this temperature range, these dependences, alike those for \(\hbox {Y}_{1-y}\hbox {Pr}_y\hbox {Ba}_2\hbox {Cu}_3\hbox {O}_{7-x}\) with various Pr content, \(y\), can be described with great accuracy by an expression accounting for electron scattering on phonons and defects, as well as the fluctuation conductivity within the 3D Aslamazov–Larkin model. Our analysis shows that for both compounds the scattering characteristics for the charge carriers in the layer planes are determined by defects in the \(\hbox {CuO}_2\) layers, which arise owing to changes in the oxygen deficiency or in the Pr content. Our data suggest that the fluctuation parameters are affected by the total defect concentration rather than by the oxygen deficiency. The dependences \(T_c(\delta )\) for \(\hbox {YBa}_2\hbox {Cu}_3\hbox {O}_{7-\delta }\) and \(T_c(y)\) for \(\hbox {Y}_{1-y}\hbox {Pr}_y\hbox {Ba}_2\hbox {Cu}_3\hbox {O}_{7-x}\) are similar, especially for \(y,\delta <0.2\), and both can be ascribed to the suppression of superconductivity by defects.

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Metadata
Title
Effect of defects on the basal-plane resistivity of and single crystals
Authors
Ruslan V. Vovk
Georgij Ya. Khadzhai
Oleksandr V. Dobrovolskiy
Nikolaj R. Vovk
Zarif F. Nazyrov
Publication date
01-03-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 3/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2558-y

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