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Journal of Materials Science: Materials in Electronics

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20-05-2019

Effect of growth temperature on the photovoltaic characteristics of thermal chemical vapor deposited MoS₂ layers grown on p-type Si

Authors: Maryam Alsadat Nikpay, Seyedeh Zahra Mortazavi, Ali Reyhani, Seyed Mohammad Elahi

Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2019

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Abstract

In this work, MoS₂ layers were grown on the silicon substrates using thermal chemical vapor deposition at different growth temperatures. This method was done by simultaneous evaporating of MoO₃ and sulfur powders as precursors at one-step process. The structural properties of the samples were assessed by X-ray diffraction patterns which confirmed the formation of hexagonal MoS₂ structures (2H-MoS₂). The surface morphology and the thickness of the grown layer were determined by field emission scanning electron microscopy. Moreover, UV–Vis and Raman spectroscopy were applied to confirm the formation of the few layer MoS₂ structures. Furthermore, the sheet resistance measurements were carried out to evaluate the resistivity of the obtained layers. In addition, the photovoltaic characteristics of the MoS₂ layers grown on p-type Si as p–n junction with Ag (top) and Al (back) contacts were assessed under illumination of sun light simulator.

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Title: Effect of growth temperature on the photovoltaic characteristics of thermal chemical vapor deposited MoS2 layers grown on p-type Si
Authors: Maryam Alsadat Nikpay
Seyedeh Zahra Mortazavi
Ali Reyhani
Seyed Mohammad Elahi
Publication date: 20-05-2019
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 12/2019
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-019-01511-w

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