Top

Published in:

01-08-2012 | Physics of Semiconductor Devices

Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

Authors: N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, P. E. Latyshev, Yu. S. Lelikov, Yu. T. Rebane, A. I. Tsyuk, Yu. G. Shreter

Published in: Semiconductors | Issue 8/2012

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

previous article Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers

next article High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 340 Zeitschriften

aus folgenden Fachgebieten:

Bauwesen + Immobilien
Business IT + Informatik
Finance + Banking
Management + Führung
Marketing + Vertrieb
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

Title: Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density
Authors: N. I. Bochkareva
V. V. Voronenkov
R. I. Gorbunov
A. S. Zubrilov
P. E. Latyshev
Yu. S. Lelikov
Yu. T. Rebane
A. I. Tsyuk
Yu. G. Shreter
Publication date: 01-08-2012
Publisher: SP MAIK Nauka/Interperiodica
Published in: Semiconductors / Issue 8/2012
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI: https://doi.org/10.1134/S1063782612080039

Springer Professional

Please log in to get access to your license.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Wirtschaft"

Springer Professional "Technik"

Other articles of this Issue 8/2012

Electric-field-induced modification of the optical properties of CuI crystals

Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons

Effect of a transverse electric field on charge carrier mobility in nanowires

Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures

Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser

Premium Partner