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Journal of Materials Science: Materials in Electronics
Published in:

04-08-2016

Effect of thickness on crystallization behavior in GeSb9 phase change films

Authors: Wen Zhang, Dongyan Wu, Yifeng Hu, Airu Jiang, Junshu Xu, Hao Liu, Shupo Bu, Ruihua Shi

Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2016

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Abstract

Phase change behavior in GeSb9 thin films with different thickness were investigated by utilizing in situ resistance measurements. It is found that the crystallization temperatures and resistances increase with decreasing of film thickness. The analysis of X-ray diffraction indicated that the grain size decreases and the crystallization is suppressed by decreasing film thickness. The surface roughness of thin films was measured by atomic forced microscopy. The obtained values of Avrami indexes indicate that the nucleation rate decreases with decreasing the film thickness. The phase change memory devices based on GeSb9 thin films were fabricated and the lower RESET power consumption was observed for thinner film.
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Metadata
Title
Effect of thickness on crystallization behavior in GeSb9 phase change films
Authors
Wen Zhang
Dongyan Wu
Yifeng Hu
Airu Jiang
Junshu Xu
Hao Liu
Shupo Bu
Ruihua Shi
Publication date
04-08-2016
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 12/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5460-y

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