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Journal of Computational Electronics
Published in:

02-09-2024

Effects of negative hydroxyl ions at the SnO2/perovskite layer interface on the performance of perovskite solar cells

Authors: Mehdi Banihashemi, Alireza Kashani Nia

Published in: Journal of Computational Electronics | Issue 6/2024

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Abstract

In this work we studied the effects of negative hydroxyl ions at the SnO2/perovskite layer interface with respect to the performance of perovskite solar cells (PSCs). We considered a layer of 1 nm thickness, containing fixed negative ions, at the SnO2/perovskite layer interface. The density of the ions was set to 7 × 1019 cm−3 in our simulations. To maintain charge neutrality in the SnO2 electron transport layer (ETL), we calculated the number of negative ions in the 1-nm-thick layer and added the same number of positive ions to the remaining part of the ETL. According to our simulation results, the negative ions increased the internal potential drop, reducing the open-circuit voltage of the perovskite solar cell from 0.99 to 0.88 V. On the other hand, the negative non-mobile hydroxyl ions at the interface absorbed some of the mobile positive ions of the perovskite layer, which increased the hysteresis index from 0.177% to 0.707%.
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Metadata
Title
Effects of negative hydroxyl ions at the SnO2/perovskite layer interface on the performance of perovskite solar cells
Authors
Mehdi Banihashemi
Alireza Kashani Nia
Publication date
02-09-2024
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 6/2024
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-024-02212-2

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