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Optical and Quantum Electronics
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01-10-2017

Efficient coupling of the inhomogeneous current spreading model to the dynamic electro-optical solver for broad-area edge-emitting semiconductor devices

Authors: Mindaugas Radziunas, Anissa Zeghuzi, Jürgen Fuhrmann, Thomas Koprucki, Hans-Jürgen Wünsche, Hans Wenzel, Uwe Bandelow

Published in: Optical and Quantum Electronics | Issue 10/2017

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Abstract

We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edge-emitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone.
previous article 3D electrothermal simulations of organic LEDs showing negative differential resistance
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Metadata
Title
Efficient coupling of the inhomogeneous current spreading model to the dynamic electro-optical solver for broad-area edge-emitting semiconductor devices
Authors
Mindaugas Radziunas
Anissa Zeghuzi
Jürgen Fuhrmann
Thomas Koprucki
Hans-Jürgen Wünsche
Hans Wenzel
Uwe Bandelow
Publication date
01-10-2017
Publisher
Springer US
Published in
Optical and Quantum Electronics / Issue 10/2017
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-017-1168-3

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