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Published in:
Introduction and Preliminaries Read chapter Read first chapter

2022 | OriginalPaper | Chapter

5. Electrical Breakdown and the Breakdown Formalism

Authors : James U. Gleaton, David Han, James D. Lynch, Hon Keung Tony Ng, Fabrizio Ruggeri

Published in: Fiber Bundles

Publisher: Springer International Publishing

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Abstract

In the testing of capacitors and capacitor circuits, one is interested in their reliability. Thus, one studies various types of breakdowns under accelerated stress conditions: e.g., stressed under increasing voltage or current to determine voltage or current breakdown (VBD or CBD) and time to failure under static voltage or current load or cycles to failure. The BD formalism allows one to relate BD under different testing protocols and to project the reliability to normal operating conditions.

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Literature
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Strong, A. W., Wu, E. Y., Vollertsen, R.-P., Sune, J., La Rosa, G., Rauch III, S. E., & Sullivan, T. D. (2009). Reliability wearout mechanisms in advanced CMOS technologies. John Wiley & Sons.CrossRef
Metadata
Title
Electrical Breakdown and the Breakdown Formalism
Authors
James U. Gleaton
David Han
James D. Lynch
Hon Keung Tony Ng
Fabrizio Ruggeri
Copyright Year
2022
Book
Fiber Bundles

Print ISBN: 978-3-031-14796-8

Electronic ISBN: 978-3-031-14797-5

Copyright Year: 2022

DOI
https://doi.org/10.1007/978-3-031-14797-5_5

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