Electrical characteristics of Al/(GO:PTCDA)/p-type Si structure under dark and light illumination: photovoltaic properties at 40 mW cm−2

In this study, the illumination dependence of current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Al/(GO:PTCDA)/p-type Si structure was examined under dark and 40 mW cm⁻² at 300 K (room temperature). The electrical characteristics as ideality factor (n), rectification ratio (RR), saturation current (I₀) and barrier height (Φ_bo), series resistance (R_S), and interface state densities (N_SS) were calculated and investigated using different methods. The distributions of interface densities (N_SS) as a function of (E_SS–E_V) were calculated from the forward I–V data by accounting for the bias dependence of the effective barrier heights (ϕ_e) for Al/(GO:PTCDA)/p-type Si structure in dark and under 40 mW cm⁻² light density. Furthermore, the photovoltaic properties such as open-circuit voltage (V_oc), short-circuit current (I_sc), fill factor (FF), maximum power (P), and conversion efficiency (ηP) were acquired as 7.34 × 10⁻⁶ A, 0.30 V, 1.06 × 10^–6 W, 48.2%, and 1.06% under 40 mW cm⁻² white light intensity, respectively. So, photovoltaic results confirm that in optoelectronic devices, Al/(GO:PTCDA)/p-Si structure can be employed as a photodiode.