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Published in:
2020 | OriginalPaper | Chapter
26. Electrical Properties 5
Defects in β-Ga2O3 Crystals and Their Influence on Schottky Barrier Diode Characteristics
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Abstract
β-Gallium oxide is promising for use in semiconductor power devices. First, the type and character of crystal defects, such as dislocations and voids, are described. Next, I describe the fabrication and measurement of Schottky barrier diodes (SBD) on the entire surface and investigate the relation between the leakage current and defects, as revealed mainly by the etch-pit method. The dislocations that appeared on the (010) surface became SBD leakage paths, whereas the dislocations on the (\( \bar{2}01 \)) and (001) surfaces apparently had no relation with the SBD leakage current. Voids that extend in [010] direction and appeared on all surface orientations did not affect the SBD leakage current
.