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Semiconductors
Published in: Semiconductors 2/2013

01-02-2013 | IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012

Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum

Authors: N. A. Sobolev, A. S. Loshachenko, D. S. Poloskin, E. I. Shek

Published in: Semiconductors | Issue 2/2013

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previous article The electrically active centers in oxygen-implanted silicon
next article Determination of the thickness and spectral dependence of the refractive index of Al x In1 − x Sb epitaxial layers from reflectance spectra

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Metadata
Title
Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum
Authors
N. A. Sobolev
A. S. Loshachenko
D. S. Poloskin
E. I. Shek
Publication date
01-02-2013
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 2/2013
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S106378261302019X

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