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Fabrication and Characterization of Ordered Atomic-scale Structures – A Step towards Future Nanoscale Technology Read chapter Read first chapter

2010 | OriginalPaper | Chapter

Electronic and Thermal Sequential Transport in Metallic and Superconducting Two-Junction Arrays

Authors : T. Kühn, G.S. Paraoanu

Published in: Trends in Nanophysics

Publisher: Springer Berlin Heidelberg

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Abstract

The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a self-consistent review of sequential transport processes in such devices, based on the so-called “orthodox” model. We calculate numerically the current-voltage (I–V) curves, the conductance versus bias voltage (G–V) curves, and the associated thermal transport in symmetric and asymmetric two-junction arrays such as Coulomb-blockade thermometers (CBTs), superconducting-insulator-normal-insulator-superconducting (SINIS) structures, and superconducting single-electron transistors (SETs). We investigate the behavior of these systems at the singularity-matching bias points, the dependence of microrefrigeration effects on the charging energy of the island, and the effect of a finite superconducting gap on Coulomb-blockade thermometry.

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Appendix
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Metadata
Title
Electronic and Thermal Sequential Transport in Metallic and Superconducting Two-Junction Arrays
Authors
T. Kühn
G.S. Paraoanu
Copyright Year
2010
Publisher
Springer Berlin Heidelberg
Book
Trends in Nanophysics

Print ISBN: 978-3-642-12069-5

Electronic ISBN: 978-3-642-12070-1

Copyright Year: 2010

DOI
https://doi.org/10.1007/978-3-642-12070-1_5

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