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Published in:
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2019 | OriginalPaper | Chapter

1. Electronic Properties of Dilute Bismides

Authors : Pengfei Lu, Dan Liang, Xiaoning Guan, Qian Wang, Huiyan Zhao, Liyuan Wu

Published in: Bismuth-Containing Alloys and Nanostructures

Publisher: Springer Singapore

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Abstract

In this chapter, electronic properties of dilute bismide III-V semiconductors are reviewed briefly. Theoretical and computational methods are collected and discussed extensively. Empirical models, including tight-binding (TB) model, band anti-crossing (BAC), valance band anti-crossing (VBAC), and k·p model, have been widely applied in calculations of electronic properties of dilute bismide III-V materials. First-principle methods have also been used to investigate many kinds of Bi-containing compounds, such as models of bulk, surface, and nanostructure. Several combined methods are also reviewed.

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next chapter Molecular Beam Epitaxy Growth and Properties of GaAsBi and AlAsBi
Literature
1.
C.A. Broderick, M. Usman, A. Lindsay et al., Tight binding analysis of the electronic structure of dilute bismide and nitride alloys of GaAs, in International Conference on Transparent Optical Networks, Stockholm, Sweden, 26–30 June 2011
2.
3.
4.
R. Maspero, S.J. Sweeney, M. Florescu, J. Phys.: Condens. Matter 29, 075001 (2016)
5.
6.
K. Alberi, O.D. Dubon, W. Walukiewicz et al., Appl. Phys. Lett. 91, 051909 (2007)CrossRef
7.
8.
J.P. Petropoulos, Y. Zhong, J.M.O. Zide, Appl. Phys. Lett. 99, 031110 (2011)CrossRef
9.
L.Y. Wu, L.H. Han, X.Y. Li et al., Valence band anticrossing, in InP1−xBix. Paper presented at Asia communications and photonics conference (ACP 2015), Hong Kong, China, 19–23 Nov 2015
10.
Z. Bushell, C. Broderick, L. Nattermann et al., MOVPE growth studies on dilute bismide containing III/Vs & development of an MOVPE in-situ gas phase analysis setup, 83 (2017)
11.
12.
13.
14.
15.
I. Mal, D.P. Samajdar, T.D. Das, Superlattices Microstruct. 109, 442 (2017)CrossRef
16.
C.A. Broderick, M. Usman, S.J. Sweeney et al., Semicond. Sci. Technol. 27, 094011 (2012)CrossRef
17.
18.
19.
I.P. Marko, Z. Batool, K. Hild et al., Appl. Phys. Lett. 101, 221108 (2012)CrossRef
20.
B. Fluegel, R.N. Kini, A.J. Ptak et al., Appl. Phys. Lett. 99, 162108 (2011)CrossRef
21.
22.
C.A. Broderick, M. Usman, E.P. O’Reilly, Phys Status Solidi (b) 250, 773 (2014)CrossRef
23.
B. Amrani, H. Achour, S. Louhibi et al., Solid State Commun. 148, 59 (2018)CrossRef
24.
N.A.A. Rahim, R. Ahmed, B.U. Haq et al., Comput. Mater. Sci. 114, 40 (2016)CrossRef
25.
26.
A.H. Reshak, H. Kamarudin, S. Auluck et al., J. Solid State Chem. 186, 47 (2012)CrossRef
27.
28.
29.
30.
31.
32.
33.
34.
G.N. Wei, X. Dai, Q. Feng et al., Sci. China Phys. Mech. Astron. 60, 047022 (2017)CrossRef
35.
36.
G. Luo, K. Forghani, T.F. Kuech et al., Appl. Phys. Lett. 109, 112104 (2016)CrossRef
37.
M.P.J. Punkkinen, P. Laukkanen, H.P. Komsa et al., Phys. Rev. B 78, 195304 (2008)CrossRef
38.
39.
40.
H. Achour, S. Louhibi, B. Amrani et al., Superlattices Microstruct. 44, 223 (2008)CrossRef
41.
42.
43.
U. Gupta, J.U. Reveles, J.J. Melko et al., Chem. Phys. Lett. 480, 189 (2009)CrossRef
44.
U. Gupta, J.U. Reveles, J.J. Melko et al., Chem. Phys. Lett. 467, 223 (2009)CrossRef
45.
U. Gupta, J.U. Reveles, J.J. Melko et al., J. Phys. Chem. C 114, 15963 (2010)CrossRef
46.
47.
A. Belabbes, A. Zaoui, M. Ferhat, J. Phys.: Condens. Matter 20, 415221 (2008)
48.
49.
50.
51.
52.
53.
D.P. Samajdar, T.D. Das, S. Dhar, Phys. Semicond. Devices (Springer, Cham, 2014)
54.
55.
S. Imhof, C. Wagner, A. Chernikov et al., Physica Status Solidi (b) 248, 851 (2011)CrossRef
56.
57.
58.
J. Akola, N. Atodiresei, J. Kalikka et al., J. Chem. Phys. 141, 194503 (2014)CrossRef
Metadata
Title
Electronic Properties of Dilute Bismides
Authors
Pengfei Lu
Dan Liang
Xiaoning Guan
Qian Wang
Huiyan Zhao
Liyuan Wu
Copyright Year
2019
Publisher
Springer Singapore
Book
Bismuth-Containing Alloys and Nanostructures

Print ISBN: 978-981-13-8077-8

Electronic ISBN: 978-981-13-8078-5

Copyright Year: 2019

DOI
https://doi.org/10.1007/978-981-13-8078-5_1