Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model

This research presents a simulating electrohydrodynamically (EHD) inkjet-printed memristors in LTspice environment, a popular tool for analog circuit simulation. EHD printing technique is used as one of low cost fabrication technique for fabricate flexible thin films and memristors with high precision and resolution in a scale of nanometers. Memristors are cutting-edge components for AI hardware, and they can be fabricated through various methods, including traditional semiconductor processes and printed electronics techniques. However, printed electronics fabrication based for memristor modeling accurately remains a challenge. This paper introduces a mathematical model specifically for (EHD) inkjet-printed memristors, employing empirical mathematics to ensure compatibility with LTspice. While the modeling of printed electronic devices still in the early stage—to the knowledge of the authors-this paper will discuss for the first time mathematical and Spice modeling for printed memristor. The model is validated against actual memristors with a sandwiched structure (\(\text {Ag/ZrO}_{2}/\text {Ag}\)), showing acceptable error percentage. It involves modifying an existing memristor model by incorporating a function that reflects the characteristics of the EHD printing process. This function is designed to capture the impact of the printing technique on various device parameters, such as width and length, with a focus on accurately modeling the width in the LTspice environment. This paper presents a developed LTspice model based on the proposed empirical mathematical model. The results are based on different sizes: 40 nm, 120 nm, 680 nm, respectively.