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Published in:
2007 | OriginalPaper | Chapter
Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric
Authors : Chi-Chao Wang, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Tien-Ko Wang
Published in: Simulation of Semiconductor Processes and Devices 2007
Publisher: Springer Vienna
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SiGe employment is, for the first time, proposed to enhance band-to-band-tunneling-induced hot electron injection (BBHE) in a p-channel flash by the analysis made with two dimensional device simulator MEDICI. Simulation results show that more than 100 times enhancement in the programming speed can be achieved in a proposed p-channel flash with 40% Ge in the surface SiGe channel. In addition, a Si-cap layer and HfO
2
tunnel dielectric are also incorporated to improve the interface quality. Up to 1000 times enhancement in BBHE injection programming speed is achieved in the case of a p-channel flash memory with surface SiGe layer and HfO
2
tunnel dielectric.