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Journal of Materials Science: Materials in Electronics

Enhanced breakdown strength of ferroelectric–dielectric multilayered thin films by blocking oxygen vacancies through linear dielectric layer

  • 23-04-2022
Published in:
Authors
Caiyu Yue
Huajun Sun
Xuehui Huang
Xiaofang Liu
Chao Yan
Published in
Journal of Materials Science: Materials in Electronics | Issue 14/2022

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Abstract

The article investigates the enhanced breakdown strength of ferroelectric–dielectric multilayered thin films by strategically inserting SrTiO3 (STO) layers to block oxygen vacancies. This approach significantly reduces leakage current and improves the energy storage performance of Ba0.85Sr0.15TiO3 (BST) thin films. The study systematically examines the microstructure, surface morphology, and electrical properties of the thin films, highlighting the critical role of the linear dielectric layer in enhancing the film's resistance to electric fields. The results demonstrate that different insertion positions of the STO layer have varying effects on the film's performance, with the Pt/Ba0.85Sr0.15TiO3/SrTiO3 structure showing the best energy storage efficiency and density. This research offers an innovative approach to designing high-efficiency capacitors for advanced energy storage applications.
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previous article The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors
next article Investigation of optical, structural, and electrical properties of heterostructure Fe2O3 deposited by RF magnetron sputtering on ZnO layer by spray pyrolysis
Title
Enhanced breakdown strength of ferroelectric–dielectric multilayered thin films by blocking oxygen vacancies through linear dielectric layer
Authors
Caiyu Yue
Huajun Sun
Xuehui Huang
Xiaofang Liu
Chao Yan
Publication date
23-04-2022
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 14/2022
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-022-08099-8
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