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Published in: Journal of Electronic Materials 4/2021

10-02-2021 | Original Research Article

Enhanced Electrical Properties of P3HT:WO3 Hybrid Thin Film Transistors

Authors: Beyza Yedikardeş, Fereshteh Ordokhani, Nihat Akkan, Ece Kurt, Nilgün Karatepe Yavuz, Esra Zayim, Mustafa Altun

Published in: Journal of Electronic Materials | Issue 4/2021

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Abstract

In recent decades, conjugated polymers have been widely studied in organic electronics to produce low-cost transistors. Additionally, these polymers are doped with inorganic materials in order to improve the transistor performance in terms of mobility, on/off current ratio, and threshold voltage as well as to ease processability. In this study, we use various doping concentrations (0–50% in weight) of tungsten oxide (WO3) in poly(3-hexylthiophene) (P3HT), a well-studied organic semiconductor, to optimize the transistor performance. We treat spin-coated film of the hybrid P3HT:WO3 solution on hexamethyl disilazane (HMDS) as channels of commercial test chips including 20 transistors with their gold electrodes. Compared to using pristine P3HT, the proposed hybrid P3HT:WO3 formula which significantly improves the transistor performance. Almost 105 times larger mobilities, almost 10 times larger on/off current ratios, and nearly 22 V decrease in threshold voltages were achieved. It was also observed that the excess amount of WO3 doping leads to worse mobilities and on/off current ratios.

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Metadata
Title
Enhanced Electrical Properties of P3HT:WO3 Hybrid Thin Film Transistors
Authors
Beyza Yedikardeş
Fereshteh Ordokhani
Nihat Akkan
Ece Kurt
Nilgün Karatepe Yavuz
Esra Zayim
Mustafa Altun
Publication date
10-02-2021
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 4/2021
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-021-08764-4

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