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Published in: Journal of Materials Science: Materials in Electronics 23/2017

24-08-2017

Enhanced red afterglow in Sr2SnO4:Sm3+ by co-doping Na+/K+

Authors: Bowen Zhang, Mingming Shi, Xinyu Li, Yunyun Guo, Chengkang Chang

Published in: Journal of Materials Science: Materials in Electronics | Issue 23/2017

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Abstract

Red afterglow phosphors, Sr2SnO4:Sm3+ co-activated with alkali ions (K+, Na+) were prepared via solid-state reaction. The phase identification and photoluminescence were characterized and analyzed by X-ray diffraction (XRD), photoluminescence spectroscope, afterglow measurement and thermal luminescence spectroscope. XRD results confirmed an orthorhombic structure for all the samples prepared in the experiment, showing the doping ions had negligible influence on the crystal structure. The photoluminescent spectra of the Sm-doped phosphors revealed a group of reddish orange emission lines originating from 4G5/26HJ transition of Sm3+. The optimal doping concentration of Sm3+ was determined as 1 mol% and concentration quenching was observed afterwards. For the alkaline ion co-doped samples, Na+ and K+ ions were found profitable to improve both the photoluminescence and the afterglow behavior. Thermal simulated luminescence study indicated that the persistent afterglow of Sr2SnO4:Sm3+ phosphor and alkali ions (K+, Na+) co-doped Sm3+:Sr2SnO4 phosphors were generated by the recombination of the electrons released from the electron traps with the holes in the valence band. The co-doping of alkaline ions (K+, Na+) increased not only the initial trap concentration, but also increased the depth of electron traps, which can be regarded as the main reasons for the enhanced afterglow. Based on such results, possible mechanisms for the afterglow of Sr2SnO4:Sm3+ and alkaline ions (K+, Na+) co-doped phosphors were proposed.

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Metadata
Title
Enhanced red afterglow in Sr2SnO4:Sm3+ by co-doping Na+/K+
Authors
Bowen Zhang
Mingming Shi
Xinyu Li
Yunyun Guo
Chengkang Chang
Publication date
24-08-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 23/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-7703-y

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