Skip to main content

Advanced Search

Projected result for your current search: 0

Search Operators:

You can use operators in your search query to narrow down your results even more. Click on the search operator to see an explanation of how it works.
Finds documents with exactly this word group, in exactly this word order and spelling (e.g. "employer branding").
Finds documents with both search terms (e.g. sales AND bonus).
Finds documents with one or the other search term (e.g. porsche OR volkswagen).
Finds documents with all search terms. Blank space is understood as AND (e.g. man robot production).
Finds documents with no appearance of the word behind NOT (e.g. ford NOT "harrison ford").
Finds documents where the search term is mentioned at least "n" times."n" may be any number (e.g. COUNT(gear)>8).
Finds documents with both search terms in any word order, permitting "n" words as a maximum distance between them. Best choose between 15 and 30 (e.g. NEAR(recruit, professionals, 20)).
Finds documents with the search term in word versions or composites. The asterisk * marks whether you wish them BEFORE, BEHIND, or BEFORE and BEHIND the search term (e.g. lightweight*, *lightweight, *lightweight*).
Finds documents with the search term in different spellings. "?" allows only one character (e.g. organi?ation).
Special characters are understood as AND (e.g. Miller Bros. & Sons).

Semantic Search

powered by (Link opens in a new window)
loading …
Log in
Top
Journal of Electronic Materials

Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

  • 20-03-2024
  • Original Research Article
Published in:
Authors
P. Murugapandiyan
Kalva Sri Rama Krishna
A. Revathy
Augustine Fletcher
Published in
Journal of Electronic Materials | Issue 6/2024

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

The article discusses the advantages of using an enhancement mode AlGaN/GaN MISHEMT on a β-Ga2O3 substrate for RF and power electronics applications. It highlights the superior performance of this device in terms of breakdown voltage, low ON-resistance, and high transconductance, making it a promising candidate for high-frequency and high-power applications. The use of β-Ga2O3 as a substrate offers several benefits, including high crystal quality, compatibility with GaN layers, and improved device performance. The article also presents simulation results that validate the proposed device's performance and compare it with existing HEMTs on other substrates. The novel design and superior performance of the proposed MISHEMT make it a standout solution for advanced power electronics and RF applications.
AI Generated

This summary of the content was generated with the help of AI.

Please log in to get access to your license.

Log in Register for free

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Business + Economics & Engineering + Technology"

Online-Abonnement

Springer Professional "Business + Economics & Engineering + Technology" gives you access to:

  • more than 102.000 books
  • more than 537 journals

from the following subject areas:

  • Automotive
  • Construction + Real Estate
  • Business IT + Informatics
  • Electrical Engineering + Electronics
  • Energy + Sustainability
  • Finance + Banking
  • Management + Leadership
  • Marketing + Sales
  • Mechanical Engineering + Materials
  • Insurance + Risk


Secure your knowledge advantage now!

inform now

Springer Professional "Engineering + Technology"

Online-Abonnement

Springer Professional "Engineering + Technology" gives you access to:

  • more than 67.000 books
  • more than 390 journals

from the following specialised fileds:

  • Automotive
  • Business IT + Informatics
  • Construction + Real Estate
  • Electrical Engineering + Electronics
  • Energy + Sustainability
  • Mechanical Engineering + Materials





 

Secure your knowledge advantage now!

inform now
previous article Investigation of Filament Formation and Surface Perturbation in Nanoscale-Y2O3 Memristor: A Physical Modeling Approach
next article Sintering Mechanism of Bimodal-Sized Cu Nanoparticle Paste for Power Electronics Packaging
Title
Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics
Authors
P. Murugapandiyan
Kalva Sri Rama Krishna
A. Revathy
Augustine Fletcher
Publication date
20-03-2024
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 6/2024
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-024-11005-z
This content is only visible if you are logged in and have the appropriate permissions.

Other articles of this Issue 6/2024

Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET)

  • Original Research Article

Straight-Line-Shaped Grooves Induced by Agglomeration in Thin Si Films Obtained by the Continuous-wave Laser Crystallization of A-Si on Insulator

  • Topical Collection: 65th Electronic Materials Conference 2023

Phosphorus Doping in PtRu Nanoalloys to Boost Alkaline Hydrogen Evolution Reaction

  • Topical Collection: High-Energy Battery Materials

Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method

  • Original Research Article

Thermionic Injection and Contact Resistance Model for Bottom Contact Organic Field-Effect Transistors

  • Original Research Article

Investigation of Structure and Performance of Cerium-Doped Lanthanum Fluoride Nanocrystals for Scintillators

  • Original Research Article