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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 3/2015

01-03-2015

Enhancement of Seebeck coefficient in Sb-rich Sb2Te3 thin film

Authors: Ziqiang Zhang, Yigui Wu, Haiming Zhang, Zhigang Zeng, Zhiyu Hu

Published in: Journal of Materials Science: Materials in Electronics | Issue 3/2015

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Abstract

The influence of excess antimony (Sb) on the Seebeck coefficient of antimony telluride (Sb2Te3) was investigated. Sb-rich Sb2Te3 thin film experimentally acquires Seebeck coefficient of 536 µV K−1 at room temperature, almost six times of stoichiometric Sb2Te3 thin film 90 µV K−1. The prominent enhancement of Seebeck coefficient could be attributed to carrier energy filtering effect at Sb/Sb2Te3 nanocrystal boundaries, evidenced by a set of characterizations. Meanwhile, Sb-rich Sb2Te3 thin film behaves low thermal conductivity. This experiment result implies that by altering Sb content, various Seebeck coefficients would be acquired in Sb-rich Sb2Te3 films. The highly thermoelectricity performance is especially appropriate for thermo-electric device such as thermoelectric sensor.
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Metadata
Title
Enhancement of Seebeck coefficient in Sb-rich Sb2Te3 thin film
Authors
Ziqiang Zhang
Yigui Wu
Haiming Zhang
Zhigang Zeng
Zhiyu Hu
Publication date
01-03-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 3/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2585-8

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