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Semiconductors
Published in: Semiconductors 2/1998

01-02-1998 | Electronic and Optical Properties of Semiconductors

Exciton characteristics of intercalated TlGaSe2 single crystal

Authors: S. N. Mustafaeva, E. M. Kerimova, N. Z. Gasanov

Published in: Semiconductors | Issue 2/1998

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previous article Ultrashallow p +-n junctions in silicon (100): Electron-beam diagnostics of the surface zone
next article Deformation potentials of the Γ(000) band extrema in CdGa2S4

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Metadata
Title
Exciton characteristics of intercalated TlGaSe2 single crystal
Authors
S. N. Mustafaeva
E. M. Kerimova
N. Z. Gasanov
Publication date
01-02-1998
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 2/1998
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/1.1187331

Other articles of this Issue 2/1998

Semiconductors 2/1998 Go to the issue

Atomic Structure and Non-Electronic Properties of Semiconductors

Ultrashallow p +-n junctions in silicon (100): Electron-beam diagnostics of the surface zone

Amorphous, Glassy, and Porous Semiconductors

InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 µm (T=77 K)

Semiconductor Structures, Interfaces and Surfaces

Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers

Atomic Structure and Non-Electronic Properties of Semiconductors

Diffusion doping of undoped hydrogenated amorphous silicon with tin

Low-Dimensional Systems

Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs

Electronic and Optical Properties of Semiconductors

Self-compensation in CdTe〈Cl〉 in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor

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