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2018 | OriginalPaper | Chapter

Fabrication and Investigation of Low-Voltage Programmable Flash Memory Gate Stack

Authors : Rasika Dhavse, Kumar Prashant, Chetan Dabhi, Anand Darji, R. M. Patrikar

Published in: Proceedings of the International Conference on Microelectronics, Computing & Communication Systems

Publisher: Springer Singapore

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Abstract

In this paper, fabrication, characterization, and analysis of a FGMOS gate stack employing ultra-thin tunnel oxide of 3 nm thickness are discussed. Apart from basic C-V and G-V profiles, high-frequency hysteresis curve has been investigated and device-level parameters are extracted. Use of ultra-thin tunnel oxide has facilitated direct tunneling mechanism at program/erase voltages of 10 V for 200 ms and −8 V for 40 ms, respectively. Excellent memory window of 1.2 V has been obtained. Frequency-dependent capacitance and reliability-related profiles are also studied. The device is useful for power-efficient non-real-time applications like data logging, biometric security, backup servers.

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Metadata
Title
Fabrication and Investigation of Low-Voltage Programmable Flash Memory Gate Stack
Authors
Rasika Dhavse
Kumar Prashant
Chetan Dabhi
Anand Darji
R. M. Patrikar
Copyright Year
2018
Publisher
Springer Singapore
DOI
https://doi.org/10.1007/978-981-10-5565-2_4