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2019 | OriginalPaper | Chapter

Field-Plated AlInN/AlN/GaN MOSHEMT with Improved RF Power Performance

Authors : Satya Narayan Mishra, Kanjalochan Jena, Rupam Goswami, Anand Agrawal

Published in: Advances in Signal Processing and Communication

Publisher: Springer Singapore

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Abstract

This paper proposes an AlInN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) employing a gate-field-plated technique with an objective to investigate the dependence of RF power performance. Detailed RF power analysis of the device is carried out using Silvaco Technology Computer-Aided Design (TCAD). Numerical simulations are carried out using nonlocal energy balance (EB) transport model. The results reveal that the gate-field-plated AlInN/GaN MOSHEMT possesses high prospects of delivering high currents and high power in microwave applications.

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Metadata
Title
Field-Plated AlInN/AlN/GaN MOSHEMT with Improved RF Power Performance
Authors
Satya Narayan Mishra
Kanjalochan Jena
Rupam Goswami
Anand Agrawal
Copyright Year
2019
Publisher
Springer Singapore
Book
Advances in Signal Processing and Communication

Print ISBN: 978-981-13-2552-6

Electronic ISBN: 978-981-13-2553-3

Copyright Year: 2019

DOI
https://doi.org/10.1007/978-981-13-2553-3_60