Skip to main content
Top
Published in: Journal of Electronic Materials 3/2021

03-01-2021 | Original Research Article

First-Principles Investigation of Pd-Doped Armchair Graphene Nanoribbons as a Potential Rectifier

Authors: Saurabh Kharwar, Sangeeta Singh, Neeraj K. Jaiswal

Published in: Journal of Electronic Materials | Issue 3/2021

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

A first-principles investigation is carried out on palladium (Pd)-doped armchair graphene nanoribbons (AGNRs) to investigate their structural, electronic and transport properties. The structural analysis of the considered Pd-doped nanoribbons reveals that single Pd doping at the edges of AGNRs results in the most stable configuration. The present findings reveal that the electronic transport properties are strongly dependent on the number of dopant atoms and their positions. Furthermore, it is noted that the proposed two-probe devices exhibit peculiar nonlinear IV characteristics indicating potential for rectification behavior. Excellent high rectification ratio (RR) and reverse rectification ratio (RRR) are on the order of \(1.8\times 10^{5}\) and \(9.7\times 10^{4}\), respectively, are found for center-Pd-doped 7-AGNRs. The interesting rectifying IV behavior can be explained by the localization/delocalization effect of frontier orbitals along with the variation of the transmission spectra with the applied bias voltage. These findings indicate that Pd-doped armchair GNRs are a potential candidate for use in next-generation ultralow-power nanoscale switching devices.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literature
1.
go back to reference A. Kuloglu, B. Sarikavak-Lisesivdin, S. Lisesivdin, E. Ozbay, Comput. Mater. Sci. 68, 18 (2013).CrossRef A. Kuloglu, B. Sarikavak-Lisesivdin, S. Lisesivdin, E. Ozbay, Comput. Mater. Sci. 68, 18 (2013).CrossRef
2.
go back to reference T.H. Pham, V.N. Do, Adv. Nat. Sci: Nanosci. Nanotechnol. 1(3), 033001 (2010). T.H. Pham, V.N. Do, Adv. Nat. Sci: Nanosci. Nanotechnol. 1(3), 033001 (2010).
3.
go back to reference A. Celis, M. Nair, A. Taleb-Ibrahimi, E. Conrad, C. Berger, W. De Heer, A. Tejeda, J. Phys. D Appl. Phys. 49, 143001 (2016).CrossRef A. Celis, M. Nair, A. Taleb-Ibrahimi, E. Conrad, C. Berger, W. De Heer, A. Tejeda, J. Phys. D Appl. Phys. 49, 143001 (2016).CrossRef
4.
5.
go back to reference S.S. Yu, W.T. Zheng, Q. Jiang, IEEE Trans. Nanotechnol. 9, 78 (2009). S.S. Yu, W.T. Zheng, Q. Jiang, IEEE Trans. Nanotechnol. 9, 78 (2009).
6.
go back to reference M. Wu, X. Wu, X.C. Zeng, J. Phys. Chem. 114, 3937 (2010). M. Wu, X. Wu, X.C. Zeng, J. Phys. Chem. 114, 3937 (2010).
8.
go back to reference J. Zeng, K.Q. Chen, J. He, Z.Q. Fan, X.J. Zhang, J. Appl. Phys. 109, 124502 (2011).CrossRef J. Zeng, K.Q. Chen, J. He, Z.Q. Fan, X.J. Zhang, J. Appl. Phys. 109, 124502 (2011).CrossRef
10.
11.
go back to reference T. Kostyrko, V.M. García-Suárez, C.J. Lambert, B.R. Bułka, Phys. Rev. B 81, 085308 (2010).CrossRef T. Kostyrko, V.M. García-Suárez, C.J. Lambert, B.R. Bułka, Phys. Rev. B 81, 085308 (2010).CrossRef
12.
go back to reference J. Li, Z. Zhang, M. Qiu, C. Yuan, X. Deng, Z. Fan, G. Tang, B. Liang, Carbon 80, 575 (2014).CrossRef J. Li, Z. Zhang, M. Qiu, C. Yuan, X. Deng, Z. Fan, G. Tang, B. Liang, Carbon 80, 575 (2014).CrossRef
13.
go back to reference T. Chen, X.F. Li, L.L. Wang, K.W. Luo, L. Xu, J. Appl. Phys. 116, 013702 (2014).CrossRef T. Chen, X.F. Li, L.L. Wang, K.W. Luo, L. Xu, J. Appl. Phys. 116, 013702 (2014).CrossRef
14.
go back to reference T. Martins, R.D. Miwa, A.J. Da Silva, A. Fazzio, Phys. Rev. Lett. 98, 196803 (2007).CrossRef T. Martins, R.D. Miwa, A.J. Da Silva, A. Fazzio, Phys. Rev. Lett. 98, 196803 (2007).CrossRef
15.
go back to reference S.Y. Kwon, C.V. Ciobanu, V. Petrova, V.B. Shenoy, J. Bareno, V. Gambin, I. Petrov, S. Kodambaka, Nano Lett. 9, 3985 (2009).CrossRef S.Y. Kwon, C.V. Ciobanu, V. Petrova, V.B. Shenoy, J. Bareno, V. Gambin, I. Petrov, S. Kodambaka, Nano Lett. 9, 3985 (2009).CrossRef
16.
go back to reference Y. Murata, E. Starodub, B. Kappes, C. Ciobanu, N. Bartelt, K. McCarty, S. Kodambaka, Appl. Phys. Lett. 97, 143114 (2010).CrossRef Y. Murata, E. Starodub, B. Kappes, C. Ciobanu, N. Bartelt, K. McCarty, S. Kodambaka, Appl. Phys. Lett. 97, 143114 (2010).CrossRef
17.
18.
19.
go back to reference X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. Banerjee, Science 324, 1312 (2009).CrossRef X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. Banerjee, Science 324, 1312 (2009).CrossRef
20.
21.
go back to reference X. Tang, P. A. Haddad, N. Mager, X. Geng, N. Reckinger, S. Hermans, M. Debliquy, J.P. Raskin, Sci. Rep. 9, 3653 (2019).CrossRef X. Tang, P. A. Haddad, N. Mager, X. Geng, N. Reckinger, S. Hermans, M. Debliquy, J.P. Raskin, Sci. Rep. 9, 3653 (2019).CrossRef
23.
go back to reference M. Brandbyge, J.L. Mozos, P. Ordejón, J. Taylor, K. Stokbro, Phys. Rev. B 65, 165401 (2002).CrossRef M. Brandbyge, J.L. Mozos, P. Ordejón, J. Taylor, K. Stokbro, Phys. Rev. B 65, 165401 (2002).CrossRef
24.
go back to reference J.M. Soler, E. Artacho, J.D. Gale, A. García, J. Junquera, P. Ordejón, D. Sánchez-Portal, J. Phys. Condens. Matter. 14, 2745 (2002).CrossRef J.M. Soler, E. Artacho, J.D. Gale, A. García, J. Junquera, P. Ordejón, D. Sánchez-Portal, J. Phys. Condens. Matter. 14, 2745 (2002).CrossRef
25.
26.
go back to reference K.K. Jha, N.K. Jaiswal, M. Pattanaik, P. Srivastava, Microelectron. Eng. 199, 96 (2018).CrossRef K.K. Jha, N.K. Jaiswal, M. Pattanaik, P. Srivastava, Microelectron. Eng. 199, 96 (2018).CrossRef
27.
go back to reference M. Gupta, N. Gaur, P. Kumar, S. Singh, N.K. Jaiswal, P. Kondekar, Phys. Lett. A 379, 710 (2015).CrossRef M. Gupta, N. Gaur, P. Kumar, S. Singh, N.K. Jaiswal, P. Kondekar, Phys. Lett. A 379, 710 (2015).CrossRef
28.
29.
go back to reference N. Gorjizadeh, A.A. Farajian, K. Esfarjani, Y. Kawazoe, Phys. Rev. B 78, 155427 (2008).CrossRef N. Gorjizadeh, A.A. Farajian, K. Esfarjani, Y. Kawazoe, Phys. Rev. B 78, 155427 (2008).CrossRef
30.
go back to reference C. Jin, H. Lan, L. Peng, K. Suenaga, S. Iijima, Phys. Rev. Lett. 102, 205501 (2009).CrossRef C. Jin, H. Lan, L. Peng, K. Suenaga, S. Iijima, Phys. Rev. Lett. 102, 205501 (2009).CrossRef
31.
go back to reference E.J. Duplock, M. Scheffler, P.J. Lindan, Phys. Rev. Lett. 92, 225502 (2004).CrossRef E.J. Duplock, M. Scheffler, P.J. Lindan, Phys. Rev. Lett. 92, 225502 (2004).CrossRef
32.
go back to reference I. Lopez-Corral, E. German, A. Juan, M.A. Volpe, G.P. Brizuela, J. Phys. Chem. C 115, 4315 (2011).CrossRef I. Lopez-Corral, E. German, A. Juan, M.A. Volpe, G.P. Brizuela, J. Phys. Chem. C 115, 4315 (2011).CrossRef
33.
go back to reference K. Nakada, M. Fujita, G. Dresselhaus, M.S. Dresselhaus, Phys. Rev. B 54, 17954 (1996).CrossRef K. Nakada, M. Fujita, G. Dresselhaus, M.S. Dresselhaus, Phys. Rev. B 54, 17954 (1996).CrossRef
34.
go back to reference U. Treske, F. Ortmann, B. Oetzel, K. Hannewald, F. Bechstedt, Phys. Status Solidi A 207, 304 (2010).CrossRef U. Treske, F. Ortmann, B. Oetzel, K. Hannewald, F. Bechstedt, Phys. Status Solidi A 207, 304 (2010).CrossRef
36.
go back to reference N.K. Jaiswal, P. Srivastava, Physica E Low-Dimens. Syst. Nanostruct. 44, 75 (2011).CrossRef N.K. Jaiswal, P. Srivastava, Physica E Low-Dimens. Syst. Nanostruct. 44, 75 (2011).CrossRef
37.
go back to reference V. Passi, A. Gahoi, B.V. Senkovskiy, D. Haberer, F.R. Fischer, A. Gruneis, M.C. Lemme, ACS Appl. Mater. Interfaces 10, 9900 (2018).CrossRef V. Passi, A. Gahoi, B.V. Senkovskiy, D. Haberer, F.R. Fischer, A. Gruneis, M.C. Lemme, ACS Appl. Mater. Interfaces 10, 9900 (2018).CrossRef
39.
go back to reference R. Murali, Y. Yang, K. Brenner, T. Beck, J.D. Meindl, Appl. Phys. Lett. 94, 243114 (2009).CrossRef R. Murali, Y. Yang, K. Brenner, T. Beck, J.D. Meindl, Appl. Phys. Lett. 94, 243114 (2009).CrossRef
40.
go back to reference M. Ghadiry, H. Ahmad, A. Hivechi, F. Tavakoli, A. Manaf, Plasmonics 11, 573 (2016)CrossRef M. Ghadiry, H. Ahmad, A. Hivechi, F. Tavakoli, A. Manaf, Plasmonics 11, 573 (2016)CrossRef
41.
go back to reference B. Mandal, S. Sarkar, A. Pramanik, P. Sarkar, Phys. Chem. Chem. Phys. 15, 21001 (2013).CrossRef B. Mandal, S. Sarkar, A. Pramanik, P. Sarkar, Phys. Chem. Chem. Phys. 15, 21001 (2013).CrossRef
42.
go back to reference Y. Zhou, J. Wu, P. He, T. Deng, S. Du, C. Ye, Nanosci. Nanotechnol. Lett. 7, 630 (2015).CrossRef Y. Zhou, J. Wu, P. He, T. Deng, S. Du, C. Ye, Nanosci. Nanotechnol. Lett. 7, 630 (2015).CrossRef
43.
go back to reference C. Shao, C. Rui, J. Liu, T. Wang, Q. Shao, F. Chen, Diam. Relat. Mater. 106, 107824 (2020).CrossRef C. Shao, C. Rui, J. Liu, T. Wang, Q. Shao, F. Chen, Diam. Relat. Mater. 106, 107824 (2020).CrossRef
44.
45.
go back to reference P. Yuan, X. Han, J. Yang, B. Bian, W. Li, Y. Wang, X. Luo, B. Liao, Physica E Low-Dimens. Syst. Nanostruct. 95, 32 (2018).CrossRef P. Yuan, X. Han, J. Yang, B. Bian, W. Li, Y. Wang, X. Luo, B. Liao, Physica E Low-Dimens. Syst. Nanostruct. 95, 32 (2018).CrossRef
46.
go back to reference Y. Zhou, N. Qiu, R. Li, Z. Guo, J. Zhang, J. Fang, A. Huang, J. He, X. Zha, K. Luo, J. Yin, Q. Li, X. Bai, Q. Huang, S. Du, Phys. Lett. A 380, 1049 (2016).CrossRef Y. Zhou, N. Qiu, R. Li, Z. Guo, J. Zhang, J. Fang, A. Huang, J. He, X. Zha, K. Luo, J. Yin, Q. Li, X. Bai, Q. Huang, S. Du, Phys. Lett. A 380, 1049 (2016).CrossRef
Metadata
Title
First-Principles Investigation of Pd-Doped Armchair Graphene Nanoribbons as a Potential Rectifier
Authors
Saurabh Kharwar
Sangeeta Singh
Neeraj K. Jaiswal
Publication date
03-01-2021
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 3/2021
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-020-08637-2

Other articles of this Issue 3/2021

Journal of Electronic Materials 3/2021 Go to the issue

TMS2020 Microelectronic Packaging, Interconnect, and Pb-free Solder

Wafer Level Solid Liquid Interdiffusion Bonding: Formation and Evolution of Microstructures