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2018 | OriginalPaper | Chapter

4. Floating-Gate 1Tr-NOR eFlash Memory

Authors : Antonino Conte, Fabio Disegni, Francesco La Rosa, Alfonso Maurelli

Published in: Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations

Publisher: Springer International Publishing

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Abstract

In this chapter, we will highlight the peculiar features of one of the most popular implementations of the embedded flash cell: the so-called 1Tr-NOR. The one-transistor cell has been by far the most adopted cell architecture in the world of flash NOR stand-alone memory. As an almost natural consequence, 1Tr-NOR architecture has also been considered the first, and for sure one of the best, solutions in embedded non-volatile memory (NVM) applications and has been progressively replacing EEPROM cells. In this chapter, only embedded multi-megabit flash implementation will be reviewed: different solutions for 1Tr-NOR flash cell structure and design architectures have been successfully implemented and will be described. In particular, the focus hereinafter is based on the description of how the unique features offered by that cell can be efficiently and effectively integrated into MCUs, which represent one of the major fields fueled by embedded flash capability. In the following sections, after a short introduction devoted to highlighting some peculiar technology features related to 1Tr-NOR integration with state-of-the-art CMOS, three different kind of MCU products will be thoroughly analysed:
  • the secure MCU.
  • the general-purpose/low-power MCU.
  • the automotive MCU.

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Metadata
Title
Floating-Gate 1Tr-NOR eFlash Memory
Authors
Antonino Conte
Fabio Disegni
Francesco La Rosa
Alfonso Maurelli
Copyright Year
2018
DOI
https://doi.org/10.1007/978-3-319-55306-1_4