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01-08-2016 | Fabrication, Treatment, and Testing of Materials and Structures

Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies

Authors: Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich, N. V. Abrosimov, A. S. Kamyshan, A. V. Giro, K. A. Solyanikova

Published in: Semiconductors | Issue 8/2016

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Title: Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies
Authors: Yu. M. Pokotilo
A. N. Petukh
V. V. Litvinov
V. P. Markevich
N. V. Abrosimov
A. S. Kamyshan
A. V. Giro
K. A. Solyanikova
Publication date: 01-08-2016
Publisher: Pleiades Publishing
Published in: Semiconductors / Issue 8/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI: https://doi.org/10.1134/S1063782616080182

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Elastic strains and delocalized optical phonons in AlN/GaN superlattices

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Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si

Prompt quality monitoring of InSe and GaSe semiconductor crystals by the nuclear quadrupole resonance technique

Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects

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