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2007 | OriginalPaper | Chapter

Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors

Authors: M. Luisier, A. Schenk, W. Fichtner

Published in: Simulation of Semiconductor Processes and Devices 2007

Publisher: Springer Vienna

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Source-to-drain tunneling is investigated for Si triple-gate nanowire transistors. The full-band quantum transport problem is solved in an atomistic basis using the nearestneighbor

sp

3

d

5

s*

tight-binding method. It is self-consistently coupled to the threedimensional calculation of the electrostatic potential in the device using the finite element method. This procedure is applied to the computation of

I

d

V

gs

transfer characteristics of transistors with different channel orientations such as [100], [110], [111], and [112] for gate lengths ranging from 4 nm to 13 nm. The subthreshold swing

S

is then extracted from the results to determine the scaling limit of nanowire transistors.

Metadata
Title
Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors
Authors
M. Luisier
A. Schenk
W. Fichtner
Copyright Year
2007
Publisher
Springer Vienna
DOI
https://doi.org/10.1007/978-3-211-72861-1_52