Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Published in:
Electronic Properties of Dilute Bismides Read chapter Read first chapter

2019 | OriginalPaper | Chapter

6. GaSbBi Alloys and Heterostructures: Fabrication and Properties

Authors : O. Delorme, L. Cerutti, R. Kudrawiec, Esperanza Luna, J. Kopaczek, M. Gladysiewicz, A. Trampert, E. Tournié, J.-B. Rodriguez

Published in: Bismuth-Containing Alloys and Nanostructures

Publisher: Springer Singapore

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of bandgap reduction and spin–orbit splitting. The incorporation of Bi into antimonide-based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2–5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
previous chapter Phosphorus and Nitrogen Containing Dilute Bismides
next chapter Dilute Bismuthides on InP Substrates: From Materials to Devices
Literature
1.
M.N. Abedin et al., Progress of Multicolor Single Detector to Detector Array Development For Remote Sensing. Proc. SPIE 5543, 239 (2004)CrossRef
2.
M.J. Ashwin et al., Controlled nitrogen incorporation in GaNSb alloys. AIP Adv. 1, 032159 (2011)CrossRef
3.
D.E. Aspnes, Third-derivative modulation spectroscopy with low-field electroreflectance. Surf. Sci. 37, 418 (1973)CrossRef
4.
BIsmide And Nitride Components for High temperature Operation—European Project FP7-STREP n°257974—07/2010–06/2013. www.​biancho.​org
5.
M. Bahriz et al., High temperature operation of far infrared (λ ~ 20 μm) InAs/AlSb quantum cascade lasers with dielectric waveguide. Opt. Exp. 23(2), 1523–1528 (2015)CrossRef
6.
N. Baladés et al., Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM. Nanoscale Res. Lett. 13, 125 (2018)CrossRef
7.
F. Bastiman et al., Bi incorporation in GaAs(100)-2 × 1 and 4 × 3 reconstructions investigated by RHEED and STM. J. Cryst. Growth 341, 19 (2012)CrossRef
8.
A. Beyer et al., Local Bi ordering in MOVPE grown Ga(As, Bi) investigated by high resolution scanning transmission electron microscopy. Appl. Mater. Today 6, 22–28 (2017)CrossRef
9.
R. Butkutė et al., Thermal annealing effect on the properties of GaBiAs. Phys. Status Solidi C 9, 1614 (2012)CrossRef
10.
C. Gardes et al., 100 nm AlSb/InAs HEMT for ultra-low power consumption, low-noise applications. Sci. J. Art. Num. 136340 (2014)
11.
C.R. Tait, J.M. Millunchick, Kinetics of droplet formation and Bi incorporation in GaSbBi alloys. J. Appl. Phys. 119, 215302 (2016)CrossRef
12.
A. Castellano et al., Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si. APL Photonics 2, 061301 (2017)CrossRef
13.
L. Cerutti et al., GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength near 1.55 μm. Appl. Phys. Lett. 106, 101102 (2015)CrossRef
14.
X.R. Chen et al., Bismuth Effects on electronic levels in GaSb(Bi)/AlGaSb quantum wells probed by infrared photoreflectance. Chin. Phys. Lett. 32, 067301 (2015)CrossRef
15.
H.K. Choi et al., Double-heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers. Appl. Phys. Lett. 64, 2474 (1994)CrossRef
16.
D. Fan et al., MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 31(3), 181103–181106, (2013)CrossRef
17.
D.P. Samajdar et al., Calculation of direct E0 energy gaps for III-V-Bi alloys using quantum dielectric theory, in The Book Physics of Semiconductor Devices (Springer International Publishing, Cham, 2014), pp. 779–781CrossRef
18.
D.P. Samajdar et al., Calculation of valence band structure of GaSb1−xBix using valence band anticrossing model in the dilute bi regime, in Recent Trends in Materials and Devices (Springer International Publishing, 2016), pp. 243–248
19.
S.K. Das et al., Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy. Infrared Phys. Technol. 55(1), 156–160 (2012)CrossRef
20.
O. Delorme et al., Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys. J. Cryst. Growth 477, 144–148 (2017)CrossRef
21.
O. Delorme et al., GaSbBi/GaSb quantum well laser diodes. Appl. Phys. Lett. 110, 222106 (2017)CrossRef
22.
O. Delorme et al., In situ determination of the growth conditions of GaSbBi alloys. J. Cryst. Growth 495, 9–13 (2018)CrossRef
23.
A. Duzik et al., Surface structure of bismuth terminated GaAs surfaces grown with molecular beam epitaxy. Surf. Sci. 606, 1203 (2012)CrossRef
24.
A. Duzik et al., Surface morphology and Bi incorporation in GaSbBi(As)/GaSb films. J. Cryst. Growth 390, 5–11 (2014)CrossRef
25.
E. Tournié, A.N. Baranov, Mid-Infrared lasers: a review, in Advances in Semiconductor Lasers, ed. by J.J. Coleman, A.C. Brice, C. Jagadish. Semiconductors and Semimetals, vol. 86 (Academic Press, 2012), pp. 183–226
26.
E. Luna et al., Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix/GaAs quantum wells. Nanotechnology 27(32), 325603 (2016)CrossRef
27.
E.G. Bithell, W.M. Stobbs, Composition determination in the GaAs/(Al, Ga) As system using contrast in dark-field transmission electron microscope images. Phil. Mag. A 60, 39 (1989)CrossRef
28.
F.K. Tittel, R. Lewicki, Tunable Mid-infrared Laser Absorption Spectroscopy (Woodhead Publishing Ltd., Cambridge, 2013)
29.
M. Ferhat, A. Zaoui, Structural and electronic properties of III-V bismuth compounds. Phys. Rev. B 73, 115107 (2006)CrossRef
30.
H. Fitouri et al., Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys. Opt. Mater. 42, 67 (2015)CrossRef
31.
T. Fuyuki et al., Electrically pumped room-temperature operation of GaAs1−xBix laser diodes with low-temperature dependence of oscillation wavelength. Appl. Phys. Express 7, 082101 (2014)CrossRef
32.
D.Z. Garbuzov et al., 2.7-μm InGaAsSb/AlGaAsSb laser diodes with continuous-wave operation up to −39 °C. Appl. Phys. Lett. 67, 1346 (1995)CrossRef
33.
L. Gelczuk et al., Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties. Sci. Rep. 7, 2824 (2017)CrossRef
34.
F. Glas et al., Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs. Phys. Rev. Lett. 93, 086107 (2004)CrossRef
35.
S.E. Godoy et al., Dynamic infrared imaging for skin cancer screening. Infrared Phys. Technol. 70, 147–152 (2015)CrossRef
36.
A.A. Gurjarpadhye et al., Infrared imaging tools for diagnostic applications in dermatology. SM J. Clin. Med Imaging 1(1), 1–5 (2015)
37.
H. Makhloufi et al., Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing. Nanoscale. Res. Lett. 9 (2014)CrossRef
38.
T. Hosoda et al., Type-I GaSb-based laser diodes operating in 3.1 to 3.3 μm wavelength range. IEEE Phot. Tech. Lett. 22(10), 718–720 (2010)CrossRef
39.
I. Sandall et al., Demonstration of InAsBi photoresponse beyond 3.5 μm. Appl. Phys. Lett. 104(17), 171109 (2013)CrossRef
40.
I.P. Marko et al., Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers. Semicond. Sci. Technol. 30, 094008-0910 (2015)CrossRef
41.
J. Chen et al., Effect of quantum well compressive strain above 1% on differential gain threshold current density in type-I GaSb-based diode lasers. IEEE J. Quant. Electr. 44(12), 1204–1201 (2008)
42.
J. Kopaczek et al., Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Appl. Phys. Lett. 105(11), 112102 (2014)CrossRef
43.
J. Puustinen et al., Variation of lattice constant and cluster formation in GaAsBi. J. Appl. Phys. 114(24), 243504 (2013)CrossRef
44.
J.R. Reboul et al., Continuous wave operation above room temperature of GaSb-based laser diodes grown on Si. Appl. Phys. Lett. 99(12), 121113 (2011)CrossRef
45.
A. Janotti et al., Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs. Phys. Rev. B 65, 115203 (2002)CrossRef
46.
B. Joukoff et al., Growth of InSb1-xBixsingle crystals by Czochralski method. J. Cryst. Growth 12(2), 169–172 (1972)CrossRef
47.
J. Kopaczek et al., Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study. Semicond. Sci. Technol. 30, 094005 (2015)CrossRef
48.
R. Kudrawiec et al., Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence. J. Appl. Phys. 106, 023518 (2009)CrossRef
49.
R. Kudrawiec et al., Experimental and theoretical studies of band gap alignment in GaAs1-xBix/GaAs quantum wells. J. Appl. Phys. 116, 233508 (2014)CrossRef
50.
L. Wang et al., Novel dilute bismide, epitaxy, physical properties and device application. Crystals 7(3), 63 (2017)CrossRef
51.
P. Lafaille et al., High temperature operation of short wavelength InAs-based quantum cascade lasers. AIP Adv. 2(2), 02219 (2012)CrossRef
52.
H. Lee et al., Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasers. Appl. Phys. Lett. 66, 1942 (1995)CrossRef
53.
W. Linhart et al., Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys. J. Phys. D Appl. Phys. 50, 375102 (2017)CrossRef
54.
C. Liu et al., Quantum spin hall effect in inverted type-II semiconductors. Phys. Rev. Lett. 100, 236601 (2008)CrossRef
55.
J. Lu et al., Investigation of MBE-grown InAs1 − xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy. J. Cryst. Growth 425, 250 (2015)CrossRef
56.
J. Lu et al., Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy. J. Appl. Phys. 119, 095702 (2016)CrossRef
57.
E. Luna et al., Indium distribution at the interfaces of (Ga, In)(N, As)/GaAs quantum wells. Appl. Phys. Lett. 92, 141913 (2008)CrossRef
58.
E. Luna et al., Interface properties of (Ga, In)(N, As) and (Ga, In)(As, Sb) materials systems grown by molecular beam epitaxy. J. Cryst. Growth 311, 1739 (2009)CrossRef
59.
E. Luna et al., Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces. Phys. Rev. Lett. 109, 126101 (2012)CrossRef
60.
E. Luna et al., Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers. J. Appl. Phys. 117, 185302 (2015)CrossRef
61.
E. Luna et al., Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga) As quantum wells. Appl. Phys. Lett. 110, 201906 (2017)CrossRef
62.
E. Luna et al., Microstructure and interface analysis of emerging Ga (Sb, Bi) epilayers and Ga (Sb, Bi)/GaSb quantum wells for optoelectronic applications. Appl. Phys. Lett. 112, 151905 (2018)CrossRef
63.
E. Luna et al., Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness. Semicond. Sci. Technol. 33, 094006 (2018)CrossRef
64.
M.K. Rajpalke et al., High Bi content GaSbBi alloys. J. Appl. Phys. 116(4), 043511 (2014)CrossRef
65.
M.P. Polak et al., in Theoretical and experimental studies of electronic band structure for GaSb1−xBix in the dilute Bi regime. J. Phys. D: Appl. Phys. 47(35), 355107 (2014)
66.
J.W. Matthews, A.E. Blakeslee, Defects in epitaxial multilayers. J. Cryst. Growth 27, 118 (1974)
67.
J. Misiewicz, R. Kudrawiec, Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures. Opto-Electron. Rev. 20, 101 (2012)CrossRef
68.
K. Muraki et al., Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells. Appl. Phys. Lett. 61, 557 (1992)CrossRef
69.
Nguyen-Van et al., Quantum cascade lasers grown on silicon. Sci. Rep. 8, 7206 (2018)CrossRef
70.
A.J. Noreika et al., Indium antimonide-bismuth compositions grown by molecular beam epitaxy. J. Appl. Phys. 53(7), 4932–4937 (1982)CrossRef
71.
A.G. Norman et al., Atomic ordering and phase separation in MBE GaAs1−xBix. J. Vac. Sci. Technol. B 29, 03C121 (2011)CrossRef
72.
K. Oe, Metalorganic vapour phase epitaxial growth of metastable GaAs1−xBix alloy. J. Cryst. Growth 237, 1481–1485 (2002)CrossRef
73.
R. O’Malley et al., Detection of pedestrians in far-infrared automotive night vision using region-growing and clothing distortion compensation. Infrared Phys. Technol. 53, 439–449 (2010)CrossRef
74.
P. Ludewig et al., Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Appl. Phys. Lett. 102(24), 242115 (2013)CrossRef
75.
P.A Doyle, P.S. Turner “Relativistic Hartree-Fock X-ray and electron scattering factors” Acta Crystallogr. Sect. A 24, 390 (1968)CrossRef
76.
P.K. Patil et al., GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique. Nanotechnology 28(10), 105702 (2017)CrossRef
77.
Z. Pan et al., Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy. Appl. Phys. Lett. 77, 214 (2000)CrossRef
78.
R. Pecharoman-Gallego, Quantum cascade lasers: review, applications and prospective development. Lasers Eng. 24(5–6), 277–314 (2013)
79.
M. Polak et al., First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data. Semicond. Sci. Technol. 30, 094001 (2015)CrossRef
80.
M.P.J. Punkkinen et al., Thermodynamics of the pseudobinary GaAs1−xBix (0 ≤ x ≤ 1) alloys studied by different exchange-correlation functionals, special quasi-random structures and Monte Carlo simulations. Comput. Condens. Matter 5, 7 (2015)CrossRef
81.
R. Butkutė et al., Bismuth quantum dots in annealed GaAsBi/AlAs quantum wells. Nanoscale Res. Lett. 12:436 (2017)
82.
R. Kudrawiec et al., Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of band gap alignment. Phys. Rev. Appl. (2018) (submitted (2018)
83.
R.B. Lewis et al., Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy. Appl. Phys. Lett. 100(5), 082112, (2012)
84.
M.K. Rajpalke et al., Growth and properties of GaSbBi alloys. Appl. Phys. Lett. 103, 142106 (2013)CrossRef
85.
M.K. Rajpalke et al., Bi flux-dependent MBE growth of GaSbBi alloys. J. Cryst. Growth 425, 241–244 (2015)CrossRef
86.
M. Razeghi et al., Advances in mid-infrared detection and imaging: a key issues review. Rep. Prog. Phys. 77, 082401 (2014)CrossRef
87.
D.F. Reyes et al., Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures. Nanoscale Res. Lett. 9, 23 (2014)CrossRef
88.
D.R. Rhiger, Performance comparison of long-wavelength infrared type II superlattice devices with HgCdTe. J. Electron. Mater. 40, 1815 (2011)CrossRef
89.
L.S. Rothman et al., The HITRAN 2008 molecular spectroscopic database. J. Quant. Spectrosc. Radiat. Transf. 110(9–10), 533–572 (2009)CrossRef
90.
D.L. Sales et al., Distribution of bismuth atoms in epitaxial GaAsBi. Appl. Phys. Lett. 98, 101902 (2011)CrossRef
91.
92.
M.K. Shakfa et al., Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells. J. Appl. Phys. 114, 164306 (2013)CrossRef
93.
J.A. Steele et al., Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi. Scientific Reports 6, 28860 (2016)CrossRef
94.
Sweeney-13, Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared. J. Appl. Phys. 113, 043110 (2013)CrossRef
95.
C.R. Tait et al., Droplet induced compositional inhomogeneities in GaAsBi. Appl. Phys. Lett. 111, 042105 (2017)CrossRef
96.
B.-S. Tan et al., The 640 × 512 LWIR type-II superlattice detectors operating at 110 K. Infrared Phys. Techn. 89, 168–173 (2018)CrossRef
97.
M.Z. Tidrow et al., Infrared sensors for ballistic missile defense. Infrared Phys. Technol. 42(3–5), 333 (2001)CrossRef
98.
T. Tiedje et al., Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides. Int. J. Nanotechnol. 5, 963 (2008)CrossRef
99.
S. Tixier et al., Surfactant enhanced growth of GaNAs and InGaNAs using bismuth. J. Cryst. Growth 251(1–4), 449–454 (2003)CrossRef
100.
S. Tixier et al., Molecular beam epitaxy growth of GaAs1-xBix. Appl. Phys. Lett. 82(14), 2245–2247 (2003)CrossRef
101.
A. Trampert et al., Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga, In)(N, As) diluted nitride heterostructures on GaAs substrates. J. Vac. Sci. Technol. B 22, 2195 (2004)CrossRef
102.
K. Volz et al., Detection of nanometer-sized strain fields in (GaIn)(NAs) alloys by specific dark field transmission electron microscopic imaging. J. Appl. Phys. 97, 014306 (2005)CrossRef
103.
I. Vurgaftman et al., Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 89, 5815 (2001)CrossRef
104.
I. Vurgaftman et al., Interband cascade lasers. J. Phys. D Appl. Phys. 48, 123001 (2015)CrossRef
105.
W. Linhart et al., Weak carrier localization in GaSbBi/GaSb QWs studied by photoluminescence and time resolved photoluminescence. Appl. Phys. Lett. (2018) (to be Submitted)
106.
M.C. Wagener et al., Characterization of secondary phases formed during MOVPE growth of InSbBi mixed crystals. J. Cryst. Growth 213(1–2), 51–56 (2000)CrossRef
107.
Y. Wei et al., Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 µm. Appl. Phys. Lett. 81, 3675 (2002)CrossRef
108.
U. Willer et al., Near- and mid-infrared laser monitoring of industrial processes, environment and security applications. Opt. Lasers Eng. 44(7), 699 (2006)CrossRef
109.
G. Winnewisser, Submillimeter and infrared astronomy. Infrared Phys. Technol. 35(2/3), 551 (1994)CrossRef
110.
C.E.C. Wood et al., Magnesium- and calcium-doping behavior in molecular-beam epitaxial III-V compounds. J. Appl. Phys. 53, 4230 (1982)CrossRef
111.
A.W. Wood et al., Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1−xBix films. Nanotechnology 27, 115704 (2016)CrossRef
112.
A.W. Wood et al., Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1−xBix explored by atom probe tomography and HAADF-STEM. Nanotechnology 28, 215704 (2017)CrossRef
113.
M. Wu et al., Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi. Nanotechnology 25, 205605 (2014)CrossRef
114.
M. Wu et al., Observation of atomic ordering of triple-period-A and-B type in GaAsBi. Appl. Phys. Lett. 105, 041602 (2014)CrossRef
115.
M. Wu et al., Detecting lateral composition modulation in dilute Ga(As, Bi) epilayers. Nanotechnology 26, 425701 (2015)CrossRef
116.
X. Wu et al., 1.142 μm GaAsBi/GaAs quantum well lasers grown by molecular beam epitaxy. ACS Photonics 4, 1322 (2017)CrossRef
117.
Y. Gu et al., Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy. Nanoscale. Res. Lett. 9 (2014)CrossRef
118.
Y. Song et al., Growth of GaSb1-xBix by molecular beam epitaxy. J. Vac. Sc. Technol. B 30(2), 02B114, (2012)
119.
M. Yoshimoto et al., Metastable GaAsBi alloy grown by molecular beam epitaxy. Jpn. J. Appl. Phys. 42(10B), L1235–L1237 (2003)CrossRef
120.
L. Yue et al., Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1−xBix thin films. J. Alloys Compd. 742, 780 (2018)CrossRef
121.
L. Yue et al., Structural and optical properties of GaSbBi/GaSb quantum wells. Opt. Mat. Express 8, 893–900 (2018)CrossRef
122.
Y.C. Zhang et al., Wavelength extension in GaSbBi quantum wells using delta-doping. J. Alloy. Compd. 744, 667–671 (2018)CrossRef
Metadata
Title
GaSbBi Alloys and Heterostructures: Fabrication and Properties
Authors
O. Delorme
L. Cerutti
R. Kudrawiec
Esperanza Luna
J. Kopaczek
M. Gladysiewicz
A. Trampert
E. Tournié
J.-B. Rodriguez
Copyright Year
2019
Publisher
Springer Singapore
Book
Bismuth-Containing Alloys and Nanostructures

Print ISBN: 978-981-13-8077-8

Electronic ISBN: 978-981-13-8078-5

Copyright Year: 2019

DOI
https://doi.org/10.1007/978-981-13-8078-5_6