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Published in:
CVD Growth of High-Quality Single-Layer Graphene Read chapter Read first chapter

2015 | OriginalPaper | Chapter

3. Graphene Direct Growth on Si/SiO2 Substrates

Authors : Yasuhide Ohno, Kenzo Maehashi, Kazuhiko Matsumoto

Published in: Frontiers of Graphene and Carbon Nanotubes

Publisher: Springer Japan

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Abstract

We have demonstrated direct synthesis of graphene on SiO2 substrates using transfer-free processes. An amorphous layer was sandwiched between a Ni layer and a SiO2∕Si substrate, and then the sample was annealed under the ambient of H2 and Ar. The measurements using scanning electron microscopy and Raman spectroscopy reveal that Ni islands were formed and that G ′ band was clearly observed at the region between Ni islands. From the intensity ratio of G band to G ′ band, multilayer graphene was synthesized owing to retraction of the Ni layer during annealing the sample.

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previous chapter Graphene Laser Irradiation CVD Growth
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Metadata
Title
Graphene Direct Growth on Si/SiO2 Substrates
Authors
Yasuhide Ohno
Kenzo Maehashi
Kazuhiko Matsumoto
Copyright Year
2015
Publisher
Springer Japan
Book
Frontiers of Graphene and Carbon Nanotubes

Print ISBN: 978-4-431-55371-7

Electronic ISBN: 978-4-431-55372-4

Copyright Year: 2015

DOI
https://doi.org/10.1007/978-4-431-55372-4_3