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Published in:
03-09-2015
High performance single crystalline PbWO4 nanorod field effect transistor
Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2015
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Abstract
The highly crystalline PbWO4 nanorods were synthesized using simple co-precipitation method which has application in field effect transistor. The synthesized PbWO4 nanorods were characterized by XRD, Raman spectroscopy, TEM and HRTEM indicating highly crystalline nature. Field effect transistor was fabricated on pre-patterned 300 nm SiO2/Si substrates using photolithography technique with channel length 1 µm and width 20 µm. Thin film (~100 nm) was made up of PbWO4 nanorods by spin coating on the pre-patterned device used as channel layer. The field effect mobility was observed to be 4.7 cm2 V−1 s−1 and ION/OFF ratio ~103 which is far better than the organic molecules due to single crystalline nature and rod like morphology of the PbWO4 providing direct path for charges to transport towards channel.