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2017 | OriginalPaper | Chapter

4. High-Speed Terahertz Modulation Using Active Metamaterial

Authors : Saroj Rout, Sameer Sonkusale

Published in: Active Metamaterials

Publisher: Springer International Publishing

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Abstract

This chapter covers a case study of metamaterial based terahertz modulator using embedded HEMT devices. A computational and experimental study of the terahertz (THz) device resulting from hybridization of metamaterials with pseudomorphic high electron mobility transistors (pHEMTs), fabricated in a commercial gallium arsenide (GaAs) process is presented. The principle of modulation introduced in Sect. 2.​3 is further elaborated with a detailed analysis of HEMT based modulation. The design and fabrication details of the device using a commercial Gallium-Arsenide (GaAs) process are covered next and finally the experimental methods and the results are discussed.

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next chapter A Terahertz Spatial Light Modulator for Imaging Application
Footnotes
1
Due to reasons of confidentiality with the manufacturing vendor, the proprietary heterostructure could not be published.
 
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Metadata
Title
High-Speed Terahertz Modulation Using Active Metamaterial
Authors
Saroj Rout
Sameer Sonkusale
Copyright Year
2017
Book
Active Metamaterials

Print ISBN: 978-3-319-52218-0

Electronic ISBN: 978-3-319-52219-7

Copyright Year: 2017

DOI
https://doi.org/10.1007/978-3-319-52219-7_4