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Introduction in IR Detectors Read chapter Read first chapter

2023 | OriginalPaper | Chapter

6. II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays

Authors : A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn, S. A. Dvoretsky, N. N. Mikhailov, G. Y. Sidorov, M. V. Yakushev

Published in: Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

Publisher: Springer International Publishing

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Abstract

The rapid development of thermal imaging technology requires a radical improvement in the technology of infrared photodetectors in the mid wave (MWIR, 3–5 μm) and long wave (LWIR, 8–14 μm) regions of the infrared (IR) range. Today, there is an urgent need to develop MWIR and LWIR array photodetectors of the third generation, which are subject to increased requirements for photosensitive elements, in particular, for operating temperatures, weight, dimensions, and power consumption.
One of the main ways to improve the performance of such photosensitive device structures is to increase the operating temperature of cooled photosensitive layer in the photodetectors without losing temperature sensitivity and infrared image quality. This trend is directly related to the development and implementation of new photosensitive semiconductor structures that provide low dark currents and, as a result, low intrinsic noise. This is achieved through the creation of semiconductor heterostructures by epitaxial methods. Currently, work on the creation of high operating temperature focal plane array (HOT FPA) is being actively carried out by leading manufacturers of optoelectronic equipment.
Another way to improve the performance of such photosensitive device structures is the use of so-called unipolar xBn barrier structures, where x is a contact semiconductor layer of n- or p-type conductivity, B is a barrier layer, and n is an absorbing layer of n-type of conductivity.
At present, research and development of nBn structures for FPAs are carried out both on the basis of III-V and II-VI materials. In the case of II-VI materials, a semiconducting HgCdTe solid solution is used. From a fundamental point of view, HgCdTe is an ideal material for creating IR detectors.
This chapter is review the latest advances in the development and fabrication of unipolar barrier structures based on HgCdTe.

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previous chapter New Trends and Approaches in the Development of Photonic IR Detector Technology
next chapter Infrared Sensing Using Mercury Chalcogenide Nanocrystals
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Metadata
Title
II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays
Authors
A. V. Voitsekhovskii
S. N. Nesmelov
S. M. Dzyadukh
D. I. Gorn
S. A. Dvoretsky
N. N. Mikhailov
G. Y. Sidorov
M. V. Yakushev
Copyright Year
2023
Book
Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

Print ISBN: 978-3-031-20509-5

Electronic ISBN: 978-3-031-20510-1

Copyright Year: 2023

DOI
https://doi.org/10.1007/978-3-031-20510-1_6

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