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Published in:

01-02-2025

Impact of geometrical parameters on AlGaN/GaN heterostructure MOS-HEMT biosensor

Authors: Abdellah Bouguenna, Driss Bouguenna, Amine Boudghene Stambouli, Aasif Mohammad Bhat

Published in: Journal of Computational Electronics | Issue 1/2025

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Abstract

In this work, we present the study of AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistor (MOS-HEMT) biosensors for protein detection. We study the effects of technological parameters including the gate width, gate length, AlGaN layer thickness, oxide thickness layer, and oxide type including HfO2, Al2O3, and SiO2 on the output characteristics, sensitivity of the MOS-HEMT biosensors, and CV characteristics. The model developed is compared with experimental data to verify its validity. The AlGaN/GaN bio-MOS-HEMTs show the greatest change in drain current of 208.08 mA with Wg = 100 µm, Lg= 0.3 µm, dAlGaN=15 nm, and SiO2 oxide thickness of 25 nm at protein permittivity of 2.5.

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Metadata
Title
Impact of geometrical parameters on AlGaN/GaN heterostructure MOS-HEMT biosensor
Authors
Abdellah Bouguenna
Driss Bouguenna
Amine Boudghene Stambouli
Aasif Mohammad Bhat
Publication date
01-02-2025
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 1/2025
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-024-02247-5