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2025 | OriginalPaper | Chapter

Improvement of Performance of Tunnel Field Effect Transistor and Design of Biosensor

Authors : Alok Naugarhiya, Rasmiranjan Biswal, Upendra Soni, Nilesh Goel, T. Abhinav, Kalapala Sai Gowtham

Published in: Proceedings of Third International Conference on Computational Electronics for Wireless Communications

Publisher: Springer Nature Singapore

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Abstract

The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been used in integrated circuits (ICs), which are based on MOS technology. So, as we scale below 22 nm, MOSFET has some limitations in terms of speed, power and area but as per the recent requirements of low-power devices force us to look for enhancement of MOSFET. In this paper, Germanium (Ge)-based double gate Tunnel Field Effect Transistor is used over the silicon-based TFET and its uses in low power consumption devices are discussed. Germanium (Ge)-source-based TFET is used to improve the drive current and to get a very good sub-threshold slope. Various hetero-dielectric oxides are also investigated in this project. A simple Biosensor is also designed to sense the Biomolecule present in the given substance/DNA or any other substance.

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Title: Improvement of Performance of Tunnel Field Effect Transistor and Design of Biosensor
Authors: Alok Naugarhiya
Rasmiranjan Biswal
Upendra Soni
Nilesh Goel
T. Abhinav
Kalapala Sai Gowtham
Publisher: Springer Nature Singapore
Book: Proceedings of Third International Conference on Computational Electronics for Wireless Communications
Print ISBN: 978-981-9719-42-6

Electronic ISBN: 978-981-9719-43-3

Copyright Year: 2025
DOI: https://doi.org/10.1007/978-981-97-1943-3_9