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Published in: Journal of Materials Science: Materials in Electronics 21/2017

23-05-2017

In situ investigation of magnetron sputtering plasma used for the deposition of multiferroic BiFeO3 thin films

Authors: M. Gaidi, N. Somrani, L. Stafford

Published in: Journal of Materials Science: Materials in Electronics | Issue 21/2017

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Abstract

Somrani et al. (J. Mater. Sci. 26:3316–3323, 2015) have recently investigated the BiFeO3 (BFO) thin films growth by RF magnetron sputtering. The role of the processing parameters especially the oxygen flow, deposition temperature and annealing on the microstructure and optical properties of the deposited films has been extensively studied. In this work a detailed investigation of the plasma deposition dynamics of BFO films is presented. A plasma sampling mass spectrometer was inserted into the magnetron sputtering reactor to analyze the nature and energy distribution of each ion species impinging onto the substrate surface. It was find that at very low pressure (<5 mTorr), the ion energy spectra of the sputtered species showed a wide, bimodal distribution with a low energy component corresponding to the sheath potential and a much higher energy component arising from particles ejected from the target and only slightly thermalized in the gas phase. At higher pressure, all energy distributions became narrower due to a nearly complete thermalization. The Bi+-to-Fe+ ratio was also found to decrease with increasing pressure, going from about 4 at 3 to 1 at 30 mTorr. A similar feature was observed for the O+-to-O2 + ratio. The plasma dynamic results have been correlated to the Rutherford backscattering spectroscopy characterization of BFO thin films.

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Metadata
Title
In situ investigation of magnetron sputtering plasma used for the deposition of multiferroic BiFeO3 thin films
Authors
M. Gaidi
N. Somrani
L. Stafford
Publication date
23-05-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 21/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-7178-x

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