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2010 | OriginalPaper | Chapter

7. Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields

Author : David F. Bliss

Published in: Springer Handbook of Crystal Growth

Publisher: Springer Berlin Heidelberg

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Abstract

The application of steady magnetic fields during crystal growth of indium phosphide is described, and the effect of the magnetic fields on crystal properties is analyzed. The use of magnetic fields is one of many engineering controls that can improve homogeneity and crystal quality. This method is especially relevant to InP because of the high pressure requirement for crystal growth. Under high pressure, fluid flows in the melt and in the gas environment can become uncontrolled and turbulent, with negative effects on crystal quality and reproducibility. If properly configured, a steady magnetic field can reduce random oscillatory motion in the melt and reduce the likelihood of defect formation during growth. This chapter presents the history and development of magnetic-field-assisted growth of InP and an analysis of the effects of applied fields on crystal quality.

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previous chapter Defect Formation During Crystal Growth from the Melt

next chapter Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications

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Title: Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields
Author: David F. Bliss
Publisher: Springer Berlin Heidelberg
Book: Springer Handbook of Crystal Growth
Print ISBN: 978-3-540-74182-4

Electronic ISBN: 978-3-540-74761-1

Copyright Year: 2010
DOI: https://doi.org/10.1007/978-3-540-74761-1_7

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