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Journal of Materials Science: Materials in Electronics

Influence of Cu content on the physical characteristics of CuxGaCr0.1S2 thin films for intermediate band solar cells

  • 31-10-2020
Published in:
Authors
C. Guillén
J. Herrero
Published in
Journal of Materials Science: Materials in Electronics | Issue 24/2020

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Abstract

Intermediate band semiconductors can increase the efficiency of photovoltaic solar cells via sequential absorption of photons in a wider range of the solar spectrum. The introduction of Cr substituting Ga atoms in the chalcopyrite CuGaS2 is proposed to create a suitable intermediate band, investigating the influence of the Cu/Ga ratio on the structural, morphological, optical, and electrical characteristics. For this purpose, CuxGaS2 and CuxGaCr0.1S2 thin films (with x ranging from 0.8 to 1.2) are prepared by modulated evaporation from elemental sources and analyzed comparatively by X-ray diffraction, Raman spectroscopy, atomic force microscopy, spectrophotometry, and Hall effect measurements. The incorporation of Cr produces an in-gap absorption that is independent of the Cu/Ga ratio. The mean crystallite size, surface roughness, and electrical conductivity increase with the Cu content in both CuxGaS2 and CuxGaCr0.1S2.

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previous article Influence of UV light intensity on dielectric behaviours of pure and dye-doped cholesteric liquid crystals
next article The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
Title
Influence of Cu content on the physical characteristics of CuxGaCr0.1S2 thin films for intermediate band solar cells
Authors
C. Guillén
J. Herrero
Publication date
31-10-2020
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 24/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04741-5
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