Influence of sintering temperature on the properties of Mo-doped AZO targets

This study delves into the influence of sintering temperature on the properties of Mo-doped AZO targets and the films they produce. The research explores how different sintering temperatures affect the structural and electrical characteristics of the targets, with a particular focus on the formation of the ZnAl2O4 phase at higher temperatures. The study also examines the film-forming characteristics of the targets, highlighting the excellent crystallization and low resistivity of the MAZO films. The findings reveal that sintering at 1150°C yields targets with the highest relative density and lowest resistance, while the MAZO films exhibit high transmittance, low optical absorption, and a wide band gap. This research provides valuable insights into the optimization of Mo-doped AZO targets for use in optoelectronic devices, offering a theoretical basis for their practical application and future development.