5. Innovative Techniques for Fast Growth and Fabrication of High Purity GaN Single Crystals

The chapter delves into the ammonothermal method for GaN single crystal growth, emphasizing the acidic ammonothermal method's potential for industrialization due to its lower pressure requirements and better corrosion resistance. It explores the crucial parameters affecting crystal growth, such as temperature, pressure, and mineralizer concentration, and introduces advanced techniques to enhance crystal growth rates and purity. Notably, the use of ammonium iodide as a mineralizer and the mineralizer gas phase synthesis method are highlighted for their significant impact on crystal growth rate and purity, respectively. The chapter also discusses the importance of seed crystals and oxygen contamination prevention methods, making it a comprehensive resource for professionals interested in the latest advancements in GaN crystal growth technology.