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3D-Printed Sensor Array of Semiconducting Oxides Read chapter Read first chapter

2020 | OriginalPaper | Chapter

Integral Estimate of LSI Radiation Hardness as a Fuzzy Number of Multiplicity of Nodes

Authors : V. M. Barbashov, N. S. Trushkin, A. K. Osipov

Published in: 4th International Conference on Nanotechnologies and Biomedical Engineering

Publisher: Springer International Publishing

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Abstract

The analysis of the LSI behavior under radiation exposure at functional and logical level of description was carried out. It is shown that there are deterministic and non-deterministic failures typical when exposed to ionizing radiation. In the first case, the behavior of complex devices is determined by the specific ratio of the radiation-sensitive parameters of the elements, in the second case—the statistical variation of the failure threshold levels for the same type of samples.

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previous chapter Evaluation of Radiation Hardness of the Bipolar Devices in the Space Conditions
next chapter Revision of the Curriculum on Nuclear Safety and Security in the Light of Recent International Recommendations
Literature
1.
Frank, M.J.: Associativity in a class of operations on spaces of distribution functions. Aeguationes Math 12, 121–144 (1975)MathSciNetCrossRef
2.
Barbashov, V.M., Trushkin, N.S.: Evaluation performance of digital integrated circuits while exposed to radiation. In: IOP Conference Series: Materials Science and Engineering, vol. 151, p. 012011 (2016) CrossRef
Metadata
Title
Integral Estimate of LSI Radiation Hardness as a Fuzzy Number of Multiplicity of Nodes
Authors
V. M. Barbashov
N. S. Trushkin
A. K. Osipov
Copyright Year
2020
Book
4th International Conference on Nanotechnologies and Biomedical Engineering

Print ISBN: 978-3-030-31865-9

Electronic ISBN: 978-3-030-31866-6

Copyright Year: 2020

DOI
https://doi.org/10.1007/978-3-030-31866-6_144