Top

Published in:

2010 | OriginalPaper | Chapter

9. Integrated Resistor Modeling

Author : Colin C. McAndrew

Published in: Compact Modeling

Publisher: Springer Netherlands

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

Abstract

This chapter details models for resistors. Although resistors may seem to be simple devices, in practice the effects of velocity saturation, depletion pinching, and self-heating cause the dc I(V) characteristics to be nonlinear, and for this nonlinearity to vary with geometry and temperature. Even slight nonlinearities in resistors can contribute significantly to distortion and harmonics in highly linear analog and RF circuits, so accurate modeling of the nonlinearities is needed. Parasitics and self-heating also cause the ac behavior of resistors to vary with frequency. Basics of resistor modeling are reviewed, and a physically based 3-terminal resistor model is derived, and shown to be applicable to both poly resistors and diffused resistors (which are really JFETs). The model includes geometry and temperature dependence, and also has statistical variability, including mismatch, built in. Details of some useful parameter extraction procedures are provided.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

previous chapter The HiCuM Bipolar Transistor Model

next chapter The JUNCAP2 Model for Junction Diodes

Banerjee, K., Amerasekera, A., Dixit, G., Hu, C.: Temperature and current effects on small-geometry-contact resistance. In: IEDM Tech. Digest, pp. 115–118 (1997)

Banoo, K., Gummel, H.K., Singhal, K.: Modelling resistor voltage coefficients. Agere Systems Notes (2004)

Bendix, P., Rakers, P., Wagh, P., Lemaitre, L., Grabinski, W., McAndrew, C.C., Gu, X., Gildenblat, G.: RF distortion analysis with compact MOSFET models. In: Proc. IEEE Custom Integrated Circuits Conf., pp. 9–12 (2004)

Booth, R.V.H., McAndrew, C.C.: A 3-terminal model for diffused and ion-implanted resistors. IEEE Trans. Electron Devices 44(5), 809–814 (1997) CrossRef

Caughey, D.M., Thomas, R.E.: Carrier mobilities in silicon empirically related to doping and fields. Proc. IEEE 55(12), 2192–2193 (1967) CrossRef

Chen, T.-L., Gildenblat, G.: Symmetric bulk charge linearisation in charge-sheet MOSFET model. Electron. Lett. 37(12), 791–793 (2001) CrossRef

Compact Model Council web site: http://www.geia.org/index.asp?bid=597

Forsythe, G.E., Malcolm, M.A., Moler, C.B.: Computer Methods for Mathematical Computations. Prentice-Hall, New York (1977) MATH

Ito, A.: Modeling of voltage-dependent diffused resistors. IEEE Trans. Electron Devices 44(12), 2300–2302 (1997) CrossRef

10.

Jacoboni, C., Canali, C., Ottaviani, G., Alberigi Quaranta, A.: A review of some charge transport properties of silicon. Solid-State Electron. 20(2), 77–89 (1977) CrossRef

11.

Lemaitre, L., McAndrew, C.C.: Voltage-controlled-current-source-only Verilog-A resistor model for R≥0. In: Proc. IEEE Behavioral Modeling and Simulation Workshop, pp. 93–95 (2008)

12.

Li, X., Jha, A., Gildenblat, G., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., McAndrew, C.C., Watts, J., Olsen, C.M., Coram, G.J., Chaudhry, S., Victory, J.: Benchmark tests for MOSFET compact models with application to the PSP model. IEEE Trans. Electron Devices 56(2), 243–251 (2009) CrossRef

13.

Lu, N.C.C., Gerzberg, L., Lu, C.Y., Meindl, J.D.: Modeling and optimization of monolithic polycrystalline silicon resistors. IEEE Trans. Electron Devices ED-28(7), 818–830 (1981) CrossRef

14.

Massobrio, G., Antognetti, P.: Semiconductor Device Modeling with SPICE, 2nd edn. McGraw-Hill, New York (1983)

15.

McAndrew, C.C., Sekine, S., Cassagnes, A., Wu, Z.: Physically based effective width modeling of MOSFETs and diffused resistors. In: IEEE International Conf. on Microelectronic Test Structures, pp. 169–174 (2000)

16.

McAndrew, C.C.: R3, an accurate JFET and 3-terminal diffused resistor model. In: Tech. Proc. Workshop on Compact Modeling, pp. 86–89 (2004)

17.

McAndrew, C.C., Coram, G., Blaum, A., Pilloud, O.: Correlated noise modeling and simulation. In: Tech. Proc. Workshop on Compact Modeling, pp. 40–45 (2005)

18.

Nagel, L.W.: SPICE2: A computer program to simulate semiconductor circuits. Memo ERL-M520 University of California, Berkeley (1975)

19.

Trofimenkoff, F.N.: Field-dependent mobility analysis of the field-effect transistor. Proc. IEEE 53(11), 1765–1766 (1965) CrossRef

20.

Tsividis, Y., McAndrew, C.: Operation and Modeling of the MOS Transistor, 3rd edn. Oxford University Press, London (2010)

21.

Victory, J., McAndrew, C.C., Hall, J., Zunino, M.: A 4-terminal compact model for high voltage diffused resistors with field plates. In: IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 139–142 (1997)

22.

Vogelsong, R., Brzezinski, C.: Simulation of thermal effects in electrical systems. In: IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 353–356 (1989)

Title: Integrated Resistor Modeling
Author: Colin C. McAndrew
Publisher: Springer Netherlands
Book: Compact Modeling
Print ISBN: 978-90-481-8613-6

Electronic ISBN: 978-90-481-8614-3

Copyright Year: 2010
DOI: https://doi.org/10.1007/978-90-481-8614-3_9