2007 | OriginalPaper | Chapter
Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth
Authors : H. Ceric, A. Nentchev, E. Langer, S. Selberherr
Published in: Simulation of Semiconductor Processes and Devices 2007
Publisher: Springer Vienna
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We present a model for build-up of intrinsic stress during the deposition of thin metal films. The model assumes a three-phase stress generation mechanism which corresponds to three characteristic phases of microstructure evolution. The simulation results based on the model are successfully compared with experimental results for Poly-SiGe PECVD films. The impact of critical parameter variation on mechanical properties of thin film is discussed.