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2015 | OriginalPaper | Chapter

1. Introduction to NVM Devices

Author : Panagiotis Dimitrakis, Ph.D.

Published in: Charge-Trapping Non-Volatile Memories

Publisher: Springer International Publishing

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Abstract

Since the development of the first computer, the data storage has been a major procedure and the storage units are an intricate component of any computational machine. Data storage mainly includes the storage of the software program, the storage of data that are processed in real-time as well as the storage of information that can be recalled from the computational machine at any time or processed by another machine in a different place. For simplicity we call all these units used for software or data storage as memories. During the early years of the computer age, memories were made of many tiny magnetic cores and were as big as typical rooms in a house to store very short software programs or a few data. Magnetism was a well-known phenomenon and magnetic materials were some of the first materials having the hysteresis or the alternation between two different states depending on the magnetization direction, i.e., magnetic field up or down that is necessary for Boolean-logic devices.

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next chapter A Synopsis on the State of the Art of NAND Memories
Footnotes
1
For years Flash and NVM are used as synonyms.
 
Literature
Baik SJ, Choi I, Chung U-I, Moon JT (2004) Engineering on tunnel barrier and dot surface in Si nanocrystal memories. Solid State Electron 48:1461–1690CrossRef
Bez R, Camerlenghi E, Modelli A, Visconti A (2003) Introduction to flash memory. Proc IEEE 91(4):489–502CrossRef
Brewer JE, Gill M (2008) Nonvolatile memory technologies with emphasis on Flash. Wiley, New York, NY
Bukowski T, Simmons JH (2002) Quantum dot research: current state and future prospects. Crit Rev Solid State Mater Sci 27:119–142CrossRef
Burghartz JN (ed) (2013) Guide to state-of-the-art electron devices. Wiley, New York, NY
Burr GW, Kurdi BN, Scott JC, Lam CH, Gopalakrishnan K, Shenoy RS (2008) Overview of candidate device technologies for storage-class memory. IBM J Res Dev 52:449–464CrossRef
Cappelletti P, Bez R, Cantarelli D, Fratin L (1994) Failure mechanisms of flash cell in program/erase cycling. Electron devices meeting, 1994 IEDM ‘94. Technical digest. IEEE, San Francisco, CA, pp 291–294
Changa T-C, Jiana F-Y, Chenc S-C, Tsaib Y-T (2011) Developments in nanocrystal memory. Mater Today 14:608–615CrossRef
Clementi C, Bez R (2005) Non volatile memory technologies: floating gate concept evolution. In: Claverie A et al (eds) Materials research society symposium proceedings, vol 830. MRS, Warrendale, PA, p D1.2
Crippa L, Micheloni R, Motta I, Sangalli M (2008) Nonvolatile Memories: NOR vs. NAND architectures. In: Micheloni GCR (ed) Memories in wireless systems. Springer, Berlin, pp 29–53CrossRef
Deleruyelle D, Micolaub G (2008) On the electrostatic behavior of floating nanoconductors. Solid State Electron 52:17–24CrossRef
Depas M, Vermeire B, Mertens P, Van Meirhaeghe R, Heyns M (1995) Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures. Solid State Electron 38:1465–1471CrossRef
Dimitrakis P, Normand P (2008) Silicon nanocrystal memories. In: Khriachtchev L (ed) Silicon nanophotonics. Pan Stanford Publishing, Singapore, pp 211–241
Dimitrakis P, Kapetanakis E et al (2003) MOS memory structures by very-low-energy-implanted Si in thin SiO2. Mater Sci Eng B 101:14–18CrossRef
Dimitrakis P, Normand P, Ioannou-Sougleridis V, Bonafos C, Schamm-Chardon S, Benassayag G et al (2013a) Quantum dots for memory applications. Phys Status Solidi A 210:1490–1504CrossRef
Dimitrakis P, Schamm-Chardon S, Bonafos C, Normand P (2013b) Nanoparticle-based memories: concept and operation principles. In: Chaughule S, Watawe SC (eds) Applications of nanoparticles. American Scientific Publishers, Valencia, CA, pp 17–43
Dorf RC (1993) The electrical engineering handbook. CRC PRESS, Boca Raton, FL
Dunn C, Hefley P et al (1993) Process reliability development for nonvolatile memories. In: Proceedings of the 31st annual interantional reliability physics symposium. IEEE, Atlanta, GA, pp 133–146
Freitas RF, Wilcke WW (2008) Storage-class memory: the next storage system technology. IBM J Res Dev 52:439–447CrossRef
Frohman-Bentchkowsky D (1970) The metal-nitride-oxide-silicon (MNOS)-transistor—characteristics and applications. Proc IEEE 58:1207CrossRef
Fujita S, Yasuda S et al (2003) Two-terminal Si-nanocrystal memory formed between the two metal layers IEEE-NANO 2003. IEEE, New York, NY, pp 760–762
Govoreanu B, Brunco DP et al (2005) Scaling down the interpoly dielectric for next generation flash memory: challenges and opportunities. Solid State Electron 49:1841–1848CrossRef
Habrakena FHPM, Kuiper AET (1994) Silicon nitride and oxynitride films. Mater Sci Eng R Rep 12:123–175CrossRef
Harrison P (2005) Quantum wells, wires and dots, 2nd edn. Wiley, New York, NYCrossRef
IEEE (1999) IEEE standard definitions and characterization of floating gate semiconductor arrays. IEEE, New York, NY
ITRS (2013) International technology roadmap of semiconductors (Vol. emerging research devices). SIA. ITRS, New York, NY
Kim K et al (2006) Future outlook of NAND flash technology for 40 nm node and beyond. In: Proceedings of the IEEE non-volatile semiconductor memory workshop. IEEE, Monterey, pp 9–11
King Y-C, King T-J, Hu C (1998) MOS memory using germanium nanocrystals formed by thermal oxidation of Si1-xGex. In: International electron devices meeting – IEDM, pp 115–118
Koh BH, Kan EWH et al (2005) Traps in germanium nanocrystal memory and effect on charge retention: modeling and experimental measurements. J Appl Phys 97:124305CrossRef
Lai SK (2008) Flash memories: successes and challenges. IBM J Res Dev 52(4/5):529–535CrossRef
Lai S-C, Lue H-T, Yang M-J, Hsieh J-Y, Wang S-Y, Wu T-B et al (2007) MA BE-SONOS: a bandgap engineered SONOS using metal gate and Al2O3 blocking layer to overcome erase saturation. In: IEEE non-volatile semiconductor memory workshop, pp 88–89
Lee JD, Choi J-H et al (2003a) Data retention characteristics of Sub-100 nm NAND Flash memory cells. IEEE Electron Device Lett 24(12):748CrossRef
Lee JD, Choi JH, Park D, Kinam (2003) Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND Flash memory. In: Proceedings of the IRPS. IEEE, pp 497–501
Lenzlinger M, Snow E (1969) Fowler-Nordheim tunneling into thermally grown SiO2 EDM. Technical digest, vol 40. IEEE, New York, NY, pp 273–283
Lin YH, Chien CH (2007) Two-bit lanthanum oxide trapping layer nonvolatile flash memory. J Electrochem Soc 154:H619–H622CrossRef
Lin SH, Chin A et al (2008) Good 150C retention and fast erase characteristics in charge-trap-engineered memory having a scaled Si3N4 layer. In: IEDM technical digest, pp 1–4
Lue HT, Wang SY, Shih YH (2005) BE-SONOS: a bandgap engineered SONOS with excellent performance and reliability. In: IEDM technical digest electron devices meeting. IEEE, Washington, DC, pp 547–550
Maikap et al. (2006) Very low voltage operation of p-Si/Al2O3/HfO2/TiO2/Al2O3/Pt single quantum well flash memory devices with good retention. Proc Int Conf Solid State Devices Mater, pp 582–583
Maikap S, Lee HY et al (2007) Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications. Semicond Sci Technol 22:884CrossRef
Micheloni GC (2003) Special issue on flash technology. Proc IEEE 91(4):483–488CrossRef
Micheloni R, Crippa L, Marelli A (2010) Inside NAND flash memories. Springer, HeidelbergCrossRef
Modelli A (1999) Reliability of thin dielectrics for nonvolatile applications. Microelectron Eng 48:403–408CrossRef
Ng KK (1995) Complete guide to semiconductor devices, Internationalth edn. McGraw-Hill, New York, NY
Roizin Y (2007) Microelectronics: material, science, characterization and application. In: Baklanov MGM (ed) Dielectric films for advanced microelectronics. Wiley, New York, NY
Salvo B (2009) Silicon non-volatile memories: paths of innovation. Wiley-ISTE, New York, NYCrossRef
Shen RS et al (2000) Flash memories. In: Chen W-K (ed) The VLSI handbook. CRC Press LLC, Boca Raton, FL
Shi Y, Saito K et al (1999) Effects of interface traps on charge retention characteristics in silicon-quantum-dot-based metal-oxide-semiconductor diodes. Jpn J Appl Phys 38:425–428CrossRef
Simeonov SS, Yourukov I (2004) Inter-trap tunnelling in thin SiO2 films. Phys Status Solidi A 45:2966–2979
Southwick RA III (2011) An interactive simulation tool for complex multilayer dielectric devices. IEEE Trans Device Mater Reliabil 11:236–243CrossRef
Specht M et al (2004) Sub-40 nm tri-gate charge trapping nonvolatile memory cells for high-density applications. In: Symposium on VLSI technical digest, pp 244–245
Sze SM (1981) Physics of semiconductor devices, 2nd edn. Wiley, New York, NY
Tam S, Ko P-K, Hu C (1984) Lucky-electron model of channel hot electron injection in MOSFETs. IEEE Trans Electron Devices 31:1116CrossRef
Tiwari S, Rana F, Chan K, Hanafi H, Chan W, Buchanan D (1995) Volatile and non-volatile memories in silicon with nano-crystal storage. In: Technical digest – international electron devices meeting, pp 521–524
Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbé E, Chan K (1996) A silicon nanocrystals based memory. Appl Phys Lett 68:1377–1379CrossRef
Tsai PH et al (2007) Novel SONOS-type nonvolatile memory device with suitable band offset in HfAlO charge-trapping layer. In: Symposium on VLSI TSA, pp 1–2
Tsai CY, Lee TH et al (2010) Highly scaledcharge-trapping layer of ZrON nonvolatile memory device with good retention. Appl Phys Lett 97:213504CrossRef
Tsai CY, Lee TH et al (2011) Arsenic-implanted HfON charge trapping flash memory with large memory window and good retention. IEEE Electron Device Lett 32:381–383CrossRef
Wahl J, Silva H, Gokirmak A, Kumar A, Welser J, Tiwari S (1999) Write, erase and storage times in nanocrystal memories and the role of interface states. Technical digest – international electron devices meeting, pp 375–378
Wang L, Gai S (2014) The next generation mass storage devices – physical principles and current status. Contemp Phys 1–19
Wegener H, Lincoln A, Pao H, O’Connell M, Oleksiak R, Lawrence H (1967) The variable threshold transistor, a new electrically-alterable, non-destructive read-only storage device IEDM techchnical digest. IEEE, New York, NY, p 70
White M (2000) On the go with SONOS. IEEE Circuits Designs 22–31
White MH (2006) Advancements in nanoelectronic sonos nonvolatile semiconductor memory (NVSM) devices and technology. Int J Hi Speed Electron Syst 16:479–501CrossRef
Wu JY, Chen YT et al (2010) Ultrathin HfON trapping layer for charge-trap memory made by atomic layer deposition. IEEE Electron Device Lett 31:993–995CrossRef
Yang HJ, Cheng CF et al (2008) Comparison of MONOS memory device integrity when using Hf1-x-yNxOy trapping layers with different N compositions. IEEE Trans Electron Devices 55:1417–1423CrossRef
Yater JA (2013) Implementation of Si nanocrystals in non-volatile memory devices. Phys Status Solidi A 210:1505–1511CrossRef
Zhu C, Z. Xu et al (2012) High performance MAHAHOS memory devices: charge trapping and distribution in bandgap engineered structure. In: 4th IEEE international memory workshop (IMW), pp 1–4
Metadata
Title
Introduction to NVM Devices
Author
Panagiotis Dimitrakis, Ph.D.
Copyright Year
2015
Book
Charge-Trapping Non-Volatile Memories

Print ISBN: 978-3-319-15289-9

Electronic ISBN: 978-3-319-15290-5

Copyright Year: 2015

DOI
https://doi.org/10.1007/978-3-319-15290-5_1

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