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2018 | OriginalPaper | Chapter

4. Introduction to Power Device Technology

Authors : Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker

Published in: Semiconductor Power Devices

Publisher: Springer International Publishing

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Excerpt

In the following some basic aspects of power device production technology will be described. A considerable part is devoted to the different methods of doping, which form the heart of semiconductor technology. …

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Footnotes
1
This function and the normal error function erf(x) = 1 – erfc(x) appear also in other diffusion processes (see next section, case c). Often the following analytical approximation for x ≥ 0 is sufficient:
\( erfc(x) \approx { \exp }( - 1.14x - 0.7092x^{2.122} ) \)
Its maximum error in the range 10-7 < erfc < 1 is 2‰. For negative arguments appearing in Eq. (4.16) below the approximation can be used considering that erf(–x) = –erf(x) = erfc(x) – 1.
 
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Metadata
Title
Introduction to Power Device Technology
Authors
Josef Lutz
Heinrich Schlangenotto
Uwe Scheuermann
Rik De Doncker
Copyright Year
2018
DOI
https://doi.org/10.1007/978-3-319-70917-8_4