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Published in:
Cover of the book

2012 | OriginalPaper | Chapter

1. Introduction

Authors : Pierre-Emmanuel Gaillardon, Ian O’Connor, Fabien Clermidy

Published in: Disruptive Logic Architectures and Technologies

Publisher: Springer New York

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Abstract

In this chapter, we aim to introduce the global context of the book. While the microelectronics industry is still lead by the scaling, we point out its limits and highlights some novel way coming from the nanotechnologies. In order to provide an efficient evaluation strategy of the different ways, we present the global methodology used in the remaining of the book.

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next chapter Background and Motivation
Footnotes
1
This term was first coined at the 100 k transistor mark. Other terms were later proposed (e.g. ULSI) to reflect the continually increasing complexity of integrated circuits , but  remains the term of choice within the community.
 
2
High Threshold Voltage (Vt).
 
3
Low Threshold Voltage (Vt).
 
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R.H. Dennard, F.H. Gaensslen, H.-N. Yu, V.L. Rideout, E. Bassous, A.R. Leblanc, Design of ion-implanted MOSFET’s with very small physical dimensions. IEEE J. Solid State Circuits 9(5), 256–268 (1974)CrossRef
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Metadata
Title
Introduction
Authors
Pierre-Emmanuel Gaillardon
Ian O’Connor
Fabien Clermidy
Copyright Year
2012
Publisher
Springer New York
Book
Disruptive Logic Architectures and Technologies

Print ISBN: 978-1-4614-3057-5

Electronic ISBN: 978-1-4614-3058-2

Copyright Year: 2012

DOI
https://doi.org/10.1007/978-1-4614-3058-2_1