Skip to main content
Top
Published in:

01-02-2025

Investigating the effect of structural modifications on the performance of transistors based on black phosphorene nanoribbons

Authors: Akbar Shabani, Hossein Karamitaheri

Published in: Journal of Computational Electronics | Issue 1/2025

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

The modern electronic devices’ development heavily relies on the miniaturization of MOSFET transistors. On the other hand, reduction in transistor sizes will face significant challenges, like short-channel effects. To enhance transistor performance, it is essential to explore and utilize new materials. Black phosphorene has emerged as a promising material for constructing transistors and other electronic components. Accurate modeling is crucial for predicting the behavior of future nanoscale transistors. One of proposed simulation methods is the top-of-barrier model. This study analyzes transistors based on black phosphorene nanoribbons. The electronic structure of these nanoribbons is calculated using the tight-binding method with up to five nearest neighbors. The top-of-barrier computational approach within the Landauer framework is employed to determine device characteristics. Initial evaluations of a structure without antidots show that creating an off-center antidot increases the on current to 4.98 mA. The threshold voltage also rises by 0.2 V, indicating an increase in the energy band gap, which reduces the off current significantly. The on/off current ratio can be improved by up to 2500 times with an optimal antidot design. Non-central antidots do not significantly affect the threshold voltage or off current.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literature
2.
go back to reference Lundstrom, M.S., Antoniadis, D.A.: Compact models and the physics of nanoscale fets. IEEE Trans. Electron Device. 61(2), 225–233 (2013)CrossRefMATH Lundstrom, M.S., Antoniadis, D.A.: Compact models and the physics of nanoscale fets. IEEE Trans. Electron Device. 61(2), 225–233 (2013)CrossRefMATH
3.
go back to reference Natori, K.: Ballistic metal-oxide-semiconductor field effect transistor. J. Appl. Phys. 76(8), 4879–4890 (1994)CrossRefMATH Natori, K.: Ballistic metal-oxide-semiconductor field effect transistor. J. Appl. Phys. 76(8), 4879–4890 (1994)CrossRefMATH
4.
go back to reference Wann, C.H., Noda, K., Tanaka, T., Yoshida, M., Hu, C.: A comparative study of advanced mosfet concepts. IEEE Trans. Electron Device. 43(10), 1742–1753 (1996)CrossRefMATH Wann, C.H., Noda, K., Tanaka, T., Yoshida, M., Hu, C.: A comparative study of advanced mosfet concepts. IEEE Trans. Electron Device. 43(10), 1742–1753 (1996)CrossRefMATH
5.
go back to reference Meric, I., Han, M.Y., Young, A.F., Ozyilmaz, B., Kim, P., Shepard, K.L.: Current saturation in zero-bandgap, top-gated graphene field-effect transistors. Nat. Nanotechnol. 3(11), 654–659 (2008)CrossRef Meric, I., Han, M.Y., Young, A.F., Ozyilmaz, B., Kim, P., Shepard, K.L.: Current saturation in zero-bandgap, top-gated graphene field-effect transistors. Nat. Nanotechnol. 3(11), 654–659 (2008)CrossRef
6.
go back to reference Yazdanpanah, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S.: A numerical study of line-edge roughness scattering in graphene nanoribbons. IEEE Trans. Electron Device. 59(2), 433–440 (2011)CrossRefMATH Yazdanpanah, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S.: A numerical study of line-edge roughness scattering in graphene nanoribbons. IEEE Trans. Electron Device. 59(2), 433–440 (2011)CrossRefMATH
8.
go back to reference Kou, L., Chen, C., Smith, S.C.: Phosphorene: fabrication, properties, and applications. The J. Phys. Chem. Lett. 6(14), 2794–2805 (2015)CrossRefMATH Kou, L., Chen, C., Smith, S.C.: Phosphorene: fabrication, properties, and applications. The J. Phys. Chem. Lett. 6(14), 2794–2805 (2015)CrossRefMATH
9.
go back to reference Li, L., Kim, J., Jin, C., Ye, G.J., Qiu, D.Y., Da Jornada, F.H., Shi, Z., Chen, L., Zhang, Z., Yang, F., et al.: Direct observation of the layer-dependent electronic structure in phosphorene. Nat. Nanotechnol. 12(1), 21–25 (2017)CrossRef Li, L., Kim, J., Jin, C., Ye, G.J., Qiu, D.Y., Da Jornada, F.H., Shi, Z., Chen, L., Zhang, Z., Yang, F., et al.: Direct observation of the layer-dependent electronic structure in phosphorene. Nat. Nanotechnol. 12(1), 21–25 (2017)CrossRef
10.
go back to reference Moez, M., Karamitaheri, H.: Line-edge roughness effects on the electronic properties of armchair black phosphorene nanoribbons. IEEE Trans. Electron Device. 68(10), 5114–5119 (2021)CrossRefMATH Moez, M., Karamitaheri, H.: Line-edge roughness effects on the electronic properties of armchair black phosphorene nanoribbons. IEEE Trans. Electron Device. 68(10), 5114–5119 (2021)CrossRefMATH
11.
go back to reference Gaddemane, G., Vandenberghe, W.G., Put, M.L., Chen, S., Tiwari, S., Chen, E., Fischetti, M.V.: Theoretical studies of electronic transport in monolayer and bilayer phosphorene: a critical overview. Phys. Rev. B 98(11), 115416 (2018)CrossRef Gaddemane, G., Vandenberghe, W.G., Put, M.L., Chen, S., Tiwari, S., Chen, E., Fischetti, M.V.: Theoretical studies of electronic transport in monolayer and bilayer phosphorene: a critical overview. Phys. Rev. B 98(11), 115416 (2018)CrossRef
12.
go back to reference Hanson, G.W.: Fundamentals of Nanoelectronics. Pearson Education, ??? (2019) Hanson, G.W.: Fundamentals of Nanoelectronics. Pearson Education, ??? (2019)
13.
go back to reference Carvalho, A., Wang, M., Zhu, X., Rodin, A.S., Su, H., Castro Neto, A.H.: Phosphorene: from theory to applications. Nat. Rev. Mater. 1(11), 1–16 (2016)CrossRef Carvalho, A., Wang, M., Zhu, X., Rodin, A.S., Su, H., Castro Neto, A.H.: Phosphorene: from theory to applications. Nat. Rev. Mater. 1(11), 1–16 (2016)CrossRef
14.
go back to reference Liu, H., Neal, A.T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., Ye, P.D.: Phosphorene: an unexplored 2d semiconductor with a high hole mobility. ACS Nano 8(4), 4033–4041 (2014)CrossRef Liu, H., Neal, A.T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., Ye, P.D.: Phosphorene: an unexplored 2d semiconductor with a high hole mobility. ACS Nano 8(4), 4033–4041 (2014)CrossRef
18.
go back to reference Rahman, A., Guo, J., Datta, S., Lundstrom, M.S.: Theory of ballistic nanotransistors. IEEE Trans. Electron Device. 50(9), 1853–1864 (2003)CrossRefMATH Rahman, A., Guo, J., Datta, S., Lundstrom, M.S.: Theory of ballistic nanotransistors. IEEE Trans. Electron Device. 50(9), 1853–1864 (2003)CrossRefMATH
19.
go back to reference Tsuchiya, H., Ando, H., Sawamoto, S., Maegawa, T., Hara, T., Yao, H., Ogawa, M.: Comparisons of performance potentials of silicon nanowire and graphene nanoribbon mosfets considering first-principles bandstructure effects. IEEE Trans. Electron Devices. 57(2), 406–414 (2010)CrossRef Tsuchiya, H., Ando, H., Sawamoto, S., Maegawa, T., Hara, T., Yao, H., Ogawa, M.: Comparisons of performance potentials of silicon nanowire and graphene nanoribbon mosfets considering first-principles bandstructure effects. IEEE Trans. Electron Devices. 57(2), 406–414 (2010)CrossRef
20.
go back to reference Martin, P.C., Schwinger, J.: Theory of many-particle systems. i. Physical Review 115(6), 1342 (1959) Martin, P.C., Schwinger, J.: Theory of many-particle systems. i. Physical Review 115(6), 1342 (1959)
21.
go back to reference Cao, X., Guo, J.: Simulation of phosphorene field-effect transistor at the scaling limit. IEEE Trans. Electron Device. 62(2), 659–665 (2014)CrossRefMATH Cao, X., Guo, J.: Simulation of phosphorene field-effect transistor at the scaling limit. IEEE Trans. Electron Device. 62(2), 659–665 (2014)CrossRefMATH
22.
go back to reference Hirsbrunner, M.R., Philip, T.M., Basa, B., Kim, Y., Park, M.J., Gilbert, M.J.: A review of modeling interacting transient phenomena with non-equilibrium green functions. Rep. Prog. Phys. 82(4), 046001 (2019)MathSciNetCrossRef Hirsbrunner, M.R., Philip, T.M., Basa, B., Kim, Y., Park, M.J., Gilbert, M.J.: A review of modeling interacting transient phenomena with non-equilibrium green functions. Rep. Prog. Phys. 82(4), 046001 (2019)MathSciNetCrossRef
23.
go back to reference Liu, F., Wang, Y., Liu, X., Wang, J., Guo, H.: Ballistic transport in monolayer black phosphorus transistors. IEEE Trans. Electron Device. 61(11), 3871–3876 (2014)CrossRefMATH Liu, F., Wang, Y., Liu, X., Wang, J., Guo, H.: Ballistic transport in monolayer black phosphorus transistors. IEEE Trans. Electron Device. 61(11), 3871–3876 (2014)CrossRefMATH
25.
go back to reference Zhang, X., Pan, Y., Ye, M., Quhe, R., Wang, Y., Guo, Y., Zhang, H., Dan, Y., Song, Z., Li, J., et al.: Three-layer phosphorene-metal interfaces. Nano Res. 11, 707–721 (2018)CrossRefMATH Zhang, X., Pan, Y., Ye, M., Quhe, R., Wang, Y., Guo, Y., Zhang, H., Dan, Y., Song, Z., Li, J., et al.: Three-layer phosphorene-metal interfaces. Nano Res. 11, 707–721 (2018)CrossRefMATH
26.
go back to reference Feng, Q., Yan, F., Luo, W., Wang, K.: Charge trap memory based on few-layer black phosphorus. Nanoscale 8(5), 2686–2692 (2016)CrossRefMATH Feng, Q., Yan, F., Luo, W., Wang, K.: Charge trap memory based on few-layer black phosphorus. Nanoscale 8(5), 2686–2692 (2016)CrossRefMATH
27.
go back to reference Taghizadeh Sisakht, E., Zare, M.H., Fazileh, F.: Scaling laws of band gaps of phosphorene nanoribbons: a tight-binding calculation. Phys. Rev. B 91(8), 085409 (2015)CrossRef Taghizadeh Sisakht, E., Zare, M.H., Fazileh, F.: Scaling laws of band gaps of phosphorene nanoribbons: a tight-binding calculation. Phys. Rev. B 91(8), 085409 (2015)CrossRef
28.
go back to reference Quhe, R., Li, Q., Zhang, Q., Wang, Y., Zhang, H., Li, J., Zhang, X., Chen, D., Liu, K., Ye, Y., et al.: Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors. Phys. Rev. Appl. 10(2), 024022 (2018)CrossRefMATH Quhe, R., Li, Q., Zhang, Q., Wang, Y., Zhang, H., Li, J., Zhang, X., Chen, D., Liu, K., Ye, Y., et al.: Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors. Phys. Rev. Appl. 10(2), 024022 (2018)CrossRefMATH
Metadata
Title
Investigating the effect of structural modifications on the performance of transistors based on black phosphorene nanoribbons
Authors
Akbar Shabani
Hossein Karamitaheri
Publication date
01-02-2025
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 1/2025
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-024-02268-0