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Investigation of a Dual-Drain Technique on a Nanowire Tunnel Field-Effect Transistor for Bio-sensitivity Enhancement

  • 03-04-2024
  • Original Research Article
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Abstract

The article delves into the challenges of device miniaturization and short-channel effects in MOSFETs, leading to the exploration of tunnel field-effect transistors (TFETs) as a promising alternative. It discusses the advantages of TFETs, such as better OFF-state current and subthreshold slope, and the use of low-bandgap materials to enhance ON-state current. The study focuses on the dual-drain technique in nanowire TFETs, which shows improved biosensing sensitivity and linearity parameters compared to single-drain TFETs. The research demonstrates that the dual-drain configuration can enhance the detection of biomolecules, making it a valuable tool for various applications, including biomedical and environmental monitoring.

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Title
Investigation of a Dual-Drain Technique on a Nanowire Tunnel Field-Effect Transistor for Bio-sensitivity Enhancement
Authors
Ashish Raman
Susheel Kumar Arya
Prateek Kumar
Ravi Ranjan
Publication date
03-04-2024
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 6/2024
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-024-11010-2
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