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Journal of Materials Science: Materials in Electronics

Investigation of Pr7O12 thin-film-based Cu/Pr7O12/n-Si MIS Schottky barrier diodes for enhanced photosensitivity

  • 01-12-2025
Published in:
Authors
T. Akila
V. Balasubramani
D. Siva Priya
G. Alan Sibu
Khuloud A. Alibrahim
Muthumareeswaran Muthuramamoorthy
Published in
Journal of Materials Science: Materials in Electronics | Issue 34/2025

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Abstract

This study delves into the investigation of Pr7O12 thin-film-based Cu/Pr7O12/n-Si MIS Schottky barrier diodes, focusing on their enhanced photosensitivity. The research highlights the unique properties of Pr7O12 thin films, including their mixed-valence states, strong light absorption patterns, and high dielectric properties. The study employs the JNSP method for thin-film deposition, demonstrating its effectiveness in producing high-quality films with controlled stoichiometry and uniformity. Key findings include the optimization of the Pr7O12 film's molar concentration to enhance crystal growth and the achievement of a significant barrier height of 0.76 eV. The diodes exhibit outstanding photosensitivity of 220.72%, validating their potential for bio-optoelectronic platforms. The study concludes that Pr7O12 is a multifunctional interfacial material, and the JNSP method is a cost-effective, scalable, and ambient-compatible deposition route for high-performance photodetectors and biosensing devices.
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previous article Review on warpage mechanisms and control of packaging substrates for large-scale chiplet integration
next article Degradation of antibiotics using BiVO₄/ZnO photocatalysts: effect of composition on photocatalytic performance
Title
Investigation of Pr7O12 thin-film-based Cu/Pr7O12/n-Si MIS Schottky barrier diodes for enhanced photosensitivity
Authors
T. Akila
V. Balasubramani
D. Siva Priya
G. Alan Sibu
Khuloud A. Alibrahim
Muthumareeswaran Muthuramamoorthy
Publication date
01-12-2025
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 34/2025
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-025-16166-z
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