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27-09-2019 | Technical Paper | Issue 4/2020

Microsystem Technologies 4/2020

Investigation on noise performance of InAsxSb1−x MOSFETs with compositional variations

Journal:
Microsystem Technologies > Issue 4/2020
Authors:
Swagata Bhattacherjee, Abhijit Biswas
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Abstract

Using numerical analysis we investigate the thermal and low frequency noise (LFN) performance of InAsxSb1−x-channel nMOSFETs having various As mole fractions x ranging 0.15–0.85 at channel length of 65 nm. The models used in the simulation are calibrated by comparing simulated transfer characteristic curve with experimental characteristic reported elsewhere. The numerically obtained values of drain current ID and transconductance gM are used to compute power spectral density of drain current SID/ID2, noise resistance Rn and minimum noise figure NFmin as a function of As composition fraction x. The minimum noise figure NFmin of 1.35 dB is obtained for thermal noise with x = 0.15 at frequency of 5 GHz and gate bias of 1 V. Our investigation reveals that LFN as well as thermal noise can be suppressed by proper selection of As mole fraction in InAsxSb1−x n-channel MOSFETs.

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