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Microsystem Technologies

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27-09-2019 | Technical Paper

Investigation on noise performance of InAs_xSb_1−x MOSFETs with compositional variations

Authors: Swagata Bhattacherjee, Abhijit Biswas

Published in: Microsystem Technologies | Issue 4/2020

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Abstract

Using numerical analysis we investigate the thermal and low frequency noise (LFN) performance of InAs_xSb_1−x-channel nMOSFETs having various As mole fractions x ranging 0.15–0.85 at channel length of 65 nm. The models used in the simulation are calibrated by comparing simulated transfer characteristic curve with experimental characteristic reported elsewhere. The numerically obtained values of drain current I_D and transconductance g_M are used to compute power spectral density of drain current S_ID/I_D², noise resistance R_n and minimum noise figure NF_min as a function of As composition fraction x. The minimum noise figure NF_min of 1.35 dB is obtained for thermal noise with x = 0.15 at frequency of 5 GHz and gate bias of 1 V. Our investigation reveals that LFN as well as thermal noise can be suppressed by proper selection of As mole fraction in InAs_xSb_1−x n-channel MOSFETs.

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Title: Investigation on noise performance of InAsxSb1−x MOSFETs with compositional variations
Authors: Swagata Bhattacherjee
Abhijit Biswas
Publication date: 27-09-2019
Publisher: Springer Berlin Heidelberg
Published in: Microsystem Technologies / Issue 4/2020
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-019-04639-1

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