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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 7/2013

01-07-2013

IR operation by third harmonic generation of Tl4PbTe3 and Tl4SnS3 single crystals

Authors: T. A. Malakhovskay-Rosokha, M. J. Filep, M. Yu. Sabov, I. E. Barchiy, A. O. Fedorchuk, K. J. Plucinski

Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2013

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Abstract

We have discovered substantial influence of the 3 μs CO2 laser treatment on the output third harmonic generation (THG) for Tl4SnS3 and Tl4PbTe3 single crystals. The treatment was performed in the regime of the pump-probing delay. The optimal pump-probe delaying time was 230 ps for the Tl4SnS3 crystals and 250 ps for the Tl4PbTe3 single crystals. It is crucial that for the Tl4PbTe3 the effect is substantially smaller. The effect may be explained within a framework of conception of excitation of the effective phonon subsystem effectively contributing to the THG.
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Metadata
Title
IR operation by third harmonic generation of Tl4PbTe3 and Tl4SnS3 single crystals
Authors
T. A. Malakhovskay-Rosokha
M. J. Filep
M. Yu. Sabov
I. E. Barchiy
A. O. Fedorchuk
K. J. Plucinski
Publication date
01-07-2013
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 7/2013
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1110-9

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