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Journal of Electronic Materials
Published in: Journal of Electronic Materials 9/2016

25-05-2016

Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays

Authors: J. L. He, W. D. Hu, Z. H. Ye, Y. Q. Lv, X. S. Chen, W. Lu

Published in: Journal of Electronic Materials | Issue 9/2016

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previous article MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM
next article Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations

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Metadata
Title
Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays
Authors
J. L. He
W. D. Hu
Z. H. Ye
Y. Q. Lv
X. S. Chen
W. Lu
Publication date
25-05-2016
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 9/2016
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-016-4606-2

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Journal of Electronic Materials 9/2016 Go to the issue

OriginalPaper

Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

OriginalPaper

Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

OriginalPaper

MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM

OriginalPaper

Hole Transport in Arsenic-Doped Hg1−x Cd x Te with x ≥ 0.5

OriginalPaper

Confirmation of Auger-1 Minority-Carrier Lifetimes in Hg0.77Cd0.23Te and Prediction of Dark Current for Long-Wave Infrared Focal-Plane Arrays

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Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride